Trenched bipolar transistor structures

An improved bipolar transistor structure wherein its volume is better utilized to substantially eliminate unwanted parasitic capacitance comprising:

• a substrate of a first semiconductor material;
• a collector region of a second semiconductor material fashioned upon said substrate;
• collector ohmic contacts of a third semiconductor material fashioned upon said collector region;
• a trench formed into said collector region between said collector ohmic contacts to provide a trenched growth surface;
• a base region of a fourth semiconductor material being grown uniformly within one atomic layer to a first thickness contiguously upon, said collector region, and upon and within said trench onto said trenched growth surface such that the uniformity of said first thickness of said base region is independent of the crystallographic orientation of said trenched growth surface;
• an emitter region of a fifth semiconductor material being grown uniformly within one atomic layer to a second thickness contiguously upon said base region such that the uniformity of said second thickness of said emitter region is independent of the crystallographic orientation of said base region;
• and
• emitter, base and collector metal contacts fashioned upon said emitter region, said base region and said collector ohmic contacts of said collector region, respectively, for providing electrical connections thereto.