Bipolar junction transistor with vertically integrated resistor

A vertical bipolar junction transistor (VBJT) emitter-degenerate circuit comprising:

• an emitter substructure, the emitter substructure having an emitter layer made from an emitter semiconductor;
• an emitter resistor disposed on the emitter layer;
• a bottom doped epitaxy region disposed on the emitter resistor;
• an intrinsic base disposed on the bottom doped epitaxy region, the intrinsic base made of one of an undoped semiconductor or a lightly doped semiconductor;
• a top doped epitaxy region disposed on the intrinsic base
• a collector resistor disposed on the top doped epitaxy region;
• and
• a collector made of a collector semiconductor, disposed on the collector resistor,
• wherein the emitter resistor, the bottom doped epitaxy region, the intrinsic base, the top doped epitaxy region, and the collector resistor are stacked in a channel between the emitter layer and the collector.

A vertical bipolar junction transistor (VBJT) comprising:

• an emitter substructure, the emitter substructure having an emitter layer made from an emitter semiconductor;
• a collector made of a collector semiconductor;
• an intrinsic base, the intrinsic base made of one of a lightly doped or moderately doped semiconductor, and the intrinsic base being between the emitter and the collector;
• and
• one or more of the following:
• (a) a top doped epitaxy region and a collector resistor, the top doped epitaxy region being in contact with the intrinsic base and the collector resistor and being between the intrinsic base and the collector resistor and (b) a bottom doped epitaxy region and an emitter resistor, the bottom doped epitaxy region being in contact with the intrinsic base and the emitter resistor and being between the intrinsic base and the emitter resistor.