H10D 10/421
Having both emitter-base and base-collector junctions ending at the same surface of
Official title: {having both emitter-base and base-collector junctions ending at the same surface of the body}
H10D10/421 (Having both emitter-base and base-collector junctions ending at the same surface of) appears on 544 US grants and 398 published applications in this corpus.
Search patents in H10D- Granted patents
- 544
- Published applications
- 398
- Assignees
- 191
- Inventors
- 887
- Latest grant
- 9 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 4 | 0 |
| 1978 | 3 | 0 |
| 1979 | 2 | 0 |
| 1980 | 3 | 0 |
| 1981 | 4 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 3 | 0 |
| 1985 | 2 | 0 |
| 1986 | 2 | 0 |
| 1987 | 6 | 0 |
| 1988 | 3 | 0 |
| 1989 | 9 | 0 |
| 1990 | 8 | 0 |
| 1991 | 6 | 0 |
| 1992 | 11 | 0 |
| 1993 | 9 | 0 |
| 1994 | 10 | 0 |
| 1995 | 14 | 0 |
| 1996 | 15 | 0 |
| 1997 | 14 | 0 |
| 1998 | 19 | 0 |
| 1999 | 14 | 0 |
| 2000 | 13 | 0 |
| 2001 | 17 | 13 |
| 2002 | 20 | 27 |
| 2003 | 20 | 22 |
| 2004 | 23 | 28 |
| 2005 | 29 | 25 |
| 2006 | 14 | 19 |
| 2007 | 18 | 27 |
| 2008 | 11 | 33 |
| 2009 | 19 | 18 |
| 2010 | 30 | 30 |
| 2011 | 24 | 20 |
| 2012 | 24 | 22 |
| 2013 | 18 | 20 |
| 2014 | 21 | 15 |
| 2015 | 17 | 11 |
| 2016 | 12 | 8 |
| 2017 | 8 | 9 |
| 2018 | 7 | 4 |
| 2019 | 10 | 8 |
| 2020 | 6 | 3 |
| 2021 | 2 | 8 |
| 2022 | 4 | 4 |
| 2023 | 5 | 9 |
| 2024 | 5 | 7 |
| 2025 | 3 | 6 |
| 2026 | 2 | 2 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device and electronic apparatus9 Jun 2026US 12,652,854 B2Rohm Co., Ltd.
- Lateral bipolar transistor24 Mar 2026US 12,588,259 B2STMicroelectronics (Crolles 2) SAS
- Reduced silicon dislocation defects from deep SI trench integration30 Dec 2025US 12,513,974 B2Texas Instruments Incorporated
- Semiconductor device including substrate layer with floating base region and gate driver circuit30 Sep 2025US 12,432,988 B2Infineon Technologies Austria AG
- Bipolar junction transistor (BJT) and fabricating method thereof28 Jan 2025US 12,211,910 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Layer-subtractive semiconductor processing25 Jun 2026US 2026/0181927 A1
- Three dimensional bipolar transistor23 Apr 2026US 2026/0113999 A1
- Low Saturation Voltage BJT with Enhanced Packing Flexibility25 Dec 2025US 2025/0393281 A1
- Bipolar transistor16 Oct 2025US 2025/0324678 A1STMicroelectronics International N. V.
- Bipolar junction transistor (bjt) and fabricating method thereof10 Apr 2025US 2025/0120158 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- BICDMOS structures126US 5,426,328 ASiliconix Incorporated · 1995
- Modular bipolar-CMOS-DMOS analog integrated circuit & power transistor technology114US 6,855,985 B2Advanced Analogic Technologies (Hong Kong) Limited · 2005
- Method of producing semiconductor devices89US 5,135,608 AHitachi, Ltd. · 1992
- Method for fabricating a semiconductor device having a nitrogen diffusion layer81US 5,972,783 AMatsushita Electric Industrial Co., Ltd. · 1999
- Semiconductor device with DMOS, BJT and CMOS structures72US 6,392,275 B1Fairchild Korea Semiconductor Ltd. · 2002