Semiconductor device including substrate layer with floating base region and gate driver circuit

A gate driver circuit, comprising:

• a substrate layer comprising a floating base region of a first conductivity type;
• a first well of a second conductivity type, wherein the first well and the floating base region form a first pn junction;
• a first conductive structure electrically connected to the first well;
• a barrier region of the second conductivity type, wherein the barrier region and the floating base region form an auxiliary pn junction;
• a second conductive structure electrically connected to the floating base region through a rectifying structure;
• a pull-down structure configured to produce a voltage drop between the barrier region and the second conductive structure, when charge carriers cross the auxiliary pn junction;
• and
• a half-bridge driver circuit comprising two transistors electrically connected in series between a high potential line and a low potential line.