US 5,972,783 AGranted

Method for fabricating a semiconductor device having a nitrogen diffusion layer

AssigneeMatsushita Electric Industrial Co., Ltd.

InventorsMasatoshi Arai, Mizuki Segawa, Toshiki Yabu

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Abstract

An element isolator is formed in a silicon substrate. A gate oxide film and a gate electrode are formed overlying the silicon substrate. Subsequently, a four-step large-tilted-angle ion implant is performed in which ions of nitrogen are implanted at an angle of tilt of 25 degrees, to form an oxynitride layer at each edge of the gate oxide film and to form a nitrogen diffusion layer in the silicon substrate. This is followed by formation of a lightly-doped source/drain region by means of impurity doping. A sidewall is formed on each side surface of the gate electrode, which is followed by formation of a heavily-doped source/drain region by impurity doping. The present invention provides an improved semiconductor device having high-performance, highly-reliable MOS field effect transistors and a method for fabricating the same.

Claims25

Dependent claims

A method of fabricating a semiconductor device having a MIS-type field effect transistor, said semiconductor device fabrication method comprising the steps of:

(a) a first step of forming on a semiconductor substrate an element isolator which encloses an active region;
(b) a second step of depositing on said active region an oxide film and a conductor film;
(c) a third step of patterning said oxide film and said conductor film to form a gate oxide film and a gate electrode for said MIS-type field effect transistor;
(d) a fourth step of forming a shallow nitrogen diffusion layer and an oxynitride layer by doping nitrogen into said active region at at least a portion thereof where a drain region is to be formed and into at least one of edges of said gate oxide film located on a drain formation side;
and
(e) a fifth step of forming a lightly-doped source region and a lightly-doped drain region for said MIS-type field effect transistor by doping an impurity of a first conductivity type into areas of said active region located on opposite sides of said gate electrode, such that at least said lightly-doped drain region extends under said shallow nitrogen diffusion layer.

3 more elements

A method of fabricating a semiconductor device, said semiconductor device fabrication method comprising the steps of:

(a) a first step of forming a first impurity diffusion layer by doping an impurity for carrier generation into a semiconductor region of a semiconductor substrate;
(b) a second step of forming a shallow nitrogen diffusion layer which is shallower than said first impurity diffusion layer by introducing into a semiconductor region of said semiconductor substrate wherein either of rapid annealing treatment and plasma treatment is conducted on said semiconductor substrate while maintaining said semiconductor substrate in an ambient of gas including at least nitrogen;
(c) a third step of making said carrier generation impurity active by conducting heat treatment at a hither temperature than either of said rapid annealing treatment and said plasma treatment on said semiconductor substrate having said first impurity diffusion layer and said nitrogen diffusion layer formed thereon;
wherein:
either one of said first and second steps is performed prior to the other such that said first impurity diffusion layer and said nitrogen diffusion layer at least overlap with each other.

2 more elements

Dependencies are inferred from the claim text.

Facts

Application: 08/796,710Filed 6 Feb 1997
Priority: JP 8-0208027 Feb 1996
Granted: 26 Oct 1999
Term ends: Not estimatedThe source records don’t support an estimate.

Classification16 codes

H10P 30/204
Characterised by the semiconductor materials: into Group IV semiconductors
H10D 10/051
Manufacture or treatment: of vertical BJTs
H10D 10/421
Vertical BJTs: having both emitter-base and base-collector junctions ending at the same surface of the body
H10D 30/0227
Having source and drain regions or source and drain extensions self-aligned to sides of the gate: having both lightly-doped source and drain…