Method of producing semiconductor devices
AssigneeHitachi, Ltd.
InventorKen Okutani
Life of this patent
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Abstract
A process and apparatus for producing semiconductor integrated circuit devices wherein the dry processing and the wet processing are continuously effected for the wafers to be processed, and the wafers are transferred between these processings under a vacuum condition or in a purging gas without being allowed to come in contact with the open air, to avoid adverse effects that will be caused by the open air.
Claims40
A method of producing semiconductor devices on a substrate, comprising a first step of dry processing the substrate and a second step of wet processing the substrate, wherein said step of dry processing and said step of wet processing are carried out without exposing the substrate to external air during the step of dry processing and the step of wet processing and during transfer of the substrate between the steps of dry and wet processing.
A method of producing semiconductor devices on a substrate, comprising the steps of:
- (a) a first processing step carried out in a first processing chamber to effect a first processing, said first processing being one of a dry processing and a wet processing of the substrate;
- (b) a first transfer step for transferring said substrate into a second processing chamber in an atmosphere different from external air, without permitting the substrate to come in contact with the external air after said first processing step has been completed;
- and
- (c) a second processing step carried out in a second processing chamber to effect the other of the dry processing and the wet processing, after said first transfer step has been completed.
A method of producing semiconductor devices on a substrate, comprising a first step of dry processing the substrate and a second step of wet processing the substrate, wherein the first step of dry processing is performed at a first processing station and the second step of wet processing is performed at a second processing station;
- and a further step of carrying the substrate between the first processing station and the second processing station, with the first step of dry processing, the further step of carrying the substrate between the first and second processing stations, and the second step of wet processing being carried out without exposing the substrate to external air;
- wherein the first and second processing stations are separate stations spaced from each other;
- and
- wherein the further step of carrying the substrate transports the substrate in a chamber extending between the first and second processing stations.
A method of producing semiconductor devices on a substrate, comprising a first step of dry processing the substrate and a second step of wet processing the substrate, wherein the first step of dry processing is performed at a first processing station and the second step of wet processing is performed at a second processing station;
- and a further step of carrying the substrate between the first processing station and the second processing station, with the first step of dry processing, the further step of carrying the substrate between the first and second processing stations, and the second step of wet processing being carried out without exposing the substrate to external air, and with the further step of carrying the substrate between the first processing station and the second processing station including transferring the substrate to a third processing station;
- wherein the first processing station has a different atmosphere than the second processing station;
- and
- wherein, in the third processing station, the atmosphere is changed from the atmosphere of the processing station, of the first and second stations, that the substrate has previously been in, to the atmosphere of the processing station, of the first and second processing stations, to which the substrate is being carried.
A method of producing semiconductor devices on a substrate, comprising a first step of dry processing the substrate and a second step of wet processing the substrate, wherein the first step of dry processing is performed at a first processing station and the second step of wet processing is performed at a second processing station;
- and a further step of carrying the substrate between the first processing station and the second processing station, with the first step of dry processing, the further step of carrying the substrate between the first and second processing stations, and the second step of wet processing being carried out without exposing the substrate to external air;
- wherein the atmosphere at the second processing station, during the wet processing, is a nitrogen atmosphere;
- and
- wherein the first step of dry processing is carried out under vacuum conditions.
A method of producing semiconductor devices on a substrate, comprising a first step of dry processing the substrate and a second step of wet processing the substrate, wherein said first step of dry processing and said second step of wet processing are carried out without exposing the substrate to external air during the first and second steps and in transferring the substrate between the first and second steps;
- wherein said first step of dry processing includes forming a thin film on the substrate, and said second step of wet processing includes washing the substrate and drying the substrate after the washing, the second step being performed before the first step whereby the substrate is washed and dried before forming the thin film;
- and
- wherein the thin film is a thin metal film.
A method of producing semiconductor devices on a substrate, comprising a first step of dry processing the substrate and a second step of wet processing the substrate, wherein said step of dry processing and said step of wet processing are carried out without exposing the substrate to external air during the first and second steps and in transferring the substrate between the first and second steps;
- wherein said first step of dry processing includes etching a thin film on the substrate;
- wherein said second step of wet processing includes washing the substrate after said etching;
- and
- wherein the thin film on said substrate is a thin metal film.
A method of producing semiconductor devices on a substrate, comprising a first step of dry processing the substrate and a second step of wet processing the substrate, wherein said step of dry processing and said step of wet processing are carried out without exposing the substrate to external air during the first and second steps and in transferring the substrate between the first and second steps;
- wherein said first step of dry processing includes etching a thin film on the substrate, and said second step of wet processing includes washing the substrate after said etching;
- and
- wherein the thin film has a barrier metal structure.
A method of producing semiconductor devices on a substrate, comprising a first step of dry processing the substrate and a second step of wet processing the substrate, wherein said step of dry processing and said step of wet processing are carried out without exposing the substrate to external air during the first and second steps and in transferring the substrate between the first and second steps;
- and
- wherein said first step of dry processing includes forming a first insulating film on the substrate, and the second step of wet processing includes forming a second insulating film, on the first insulating film.
Dependencies are inferred from the claim text.