Bipolar junction transistor (bjt) and fabricating method thereof

A bipolar junction transistor (BJT) structure, comprising:

• a semiconductor substrate;
• a collector region formed in the semiconductor substrate;
• a collector contact formed over the collector region;
• a plurality of base regions formed over the collector region;
• a plurality of emitter regions formed over the base regions;
• a base dielectric layer formed over the collector region and on opposite sides of the base regions, wherein a top surface of the collector region is coplanar with bottom surfaces of the base regions;
• a base conductive layer formed over and in contact with the base dielectric layer and on the opposite sides of the base regions, wherein the base conductive layer is in contact with sidewalls and top surfaces of the base regions;
• and
• a plurality of base contacts formed over the base conductive layer, wherein the base contacts are surrounded by the collector contact,
• wherein the base contacts are divided into a first group of base contacts disposed between the base regions and a second group of base contacts disposed between the base regions and the collector contact.

A bipolar junction transistor (BJT) structure, comprising:

• a semiconductor substrate;
• a collector region formed in the semiconductor substrate;
• a plurality of base regions formed over the collector region;
• a plurality of base dielectric layers formed over the collector region and on opposite sides of the base regions;
• a plurality of base conductive layers formed over and in contact with the base dielectric layers and on the opposite sides of the base regions;
• a plurality of emitter regions formed over the base regions;
• a plurality of spacer layers arranged along vertical sidewalls of the emitter regions, wherein the spacer layers are in contact with the base conductive layers and electrically isolate the emitter regions from the base conductive layers;
• a collector contact formed over the collector region;
• and
• a plurality of base contacts formed over the base conductive layers,
• wherein the base regions are surrounded by the collector contact,
• wherein the base contacts are divided into a first group of base contacts disposed between the base regions and a second group of base contacts disposed between the base regions and the collector contact.