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US 12,513,974 B2Granted
Reduced silicon dislocation defects from deep SI trench integration
AssigneeTexas Instruments Incorporated
InventorsAbbas Ali, Rajni J. Aggarwal, Steven J Adler
Life of this patent
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Abstract
An integrated circuit includes a bipolar transistor extending into a [100] surface of a semiconductor substrate having a crystalline lattice. A deep trench surrounds the bipolar transistor and has a path having a plurality of sides. At least one side extends in a direction parallel to a <100> axis of the crystalline lattice.
Claims20
An integrated circuit, comprising:
- a bipolar transistor extending into a [100] surface of a semiconductor substrate having a crystalline lattice;
- and
- a deep trench surrounding the bipolar transistor with a path having a plurality of sides, at least one side extending in a direction parallel to a <100> axis of the crystalline lattice,
- wherein the bipolar transistor has an emitter strip, a base strip or a collector strip extending in a direction parallel to a <110> axis of the crystalline lattice.
1 more element
A method of forming an integrated circuit, comprising:
- forming a bipolar transistor extending into a [100] face of a semiconductor substrate having a crystalline lattice;
- and
- forming a deep trench surrounding the bipolar transistor, the deep trench having a path with a plurality of sides, at least one side extending in a direction parallel to a <100> axis of the crystalline lattice,
- wherein the bipolar transistor has an emitter strip, a base strip or a collector strip extending in a direction parallel to a <110> axis of the crystalline lattice.
1 more element
An integrated circuit, comprising:
- a transistor extending into a [100] surface of a semiconductor substrate having a crystalline lattice;
- and
- a deep trench surrounding the transistor with a path having a plurality of sides, at least one side extending in a direction parallel to a <100> axis of the crystalline lattice,
- wherein the transistor has a gate strip or a base strip extending in a direction parallel to a different axis of the crystalline lattice.
1 more element
Dependencies are inferred from the claim text.