Low Saturation Voltage BJT with Enhanced Packing Flexibility

A method of manufacturing a bipolar junction transistor (BJT), the method comprising:

• forming a semiconductor region, comprising:
• a drift region of a first conductivity type;
• a body region of a second conductivity type, opposite to the first conductivity type, disposed over the drift region;
• and
• one or more emitter regions of the first conductivity type disposed within the body region;
• and
• forming a plurality of metal contacts, located on a top surface of the semiconductor region, wherein the plurality of metal contacts comprise one or more first metal contacts that are in contact with the one or more emitter regions and one or more second metal contacts that are in contact with an upper surface of the body region;
• forming one or more insulating structures located on the top surface of the semiconductor region, wherein the insulating structures isolate the one or more first metal contacts from the one or more second metal contacts;
• and
• forming a metal layer located over the insulating structures, wherein the metal layer is in contact with the one or more first metal contacts and is isolated from the one or more second metal contacts by the insulating structures.