US 9,105,494 B2 · Termination trench for power MOSFET applications

Abstract

Aspects of the present disclosure describe a termination structure for a power MOSFET device. A termination trench may be formed into a semiconductor material and may encircle an active area of the MOSFET. The termination trench may comprise a first and second portion of conductive material. The first and second portions of conductive material are electrically isolated from each other. It is emphasized that this abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Claims27

Dependent claims

A termination structure comprising:

a termination trench formed into a semiconductor material of a first conductivity type, wherein the termination trench encircles one or more transistor devices formed in the semiconductor material, and wherein the sidewalls of the termination trench are lined with a dielectric material;
a first portion of conductive material disposed proximate to the dielectric material lining a sidewall of the termination trench closest to the one or more transistor devices;
and
a second portion of conductive material disposed proximate to the dielectric material lining a sidewall of the termination trench furthest from the one or more transistor devices, wherein the second portion of conductive material is electrically isolated from the first portion of conductive material.

1 more element

Dependencies are inferred from the claim text.

Termination trench for power MOSFET applications

Life of this patent

Termination trench for power MOSFET applications

Life of this patent

Abstract

Claims27