Voltage tunable solar blindness in tfs grown eg/sic schottky contact bipolar phototransistors
AssigneeUniversity of South Carolina
InventorsVenkata Surya N. Chava, MVS Chandrashekhar, Anusha Balachandran
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Abstract
A voltage tunable solar-blind UV detector using a EG/SiC heterojunction based Schottky emitter bipolar phototransistor with EG grown on p-SiC epi-layer using a chemically accelerated selective etching process of Si using TFS precursor.
Claims18
A bipolar junction transistor comprising:
- an upper epitaxial graphene emitter layer;
- an intermediate p-SiC epilayer;
- and
- an n+SiC substrate layer.
A method of forming a bipolar junction transistor comprising:
- growing a p-SiC epilayer on an n+SiC substrate layer substrate via a CVD reactor;
- and
- growing an EG top electrode layer on the p-SiC epilayer by selective etching of Si from SiC using a Tetrafluorosilane gas precursor.
The method of 10, wherein the CVD reactor uses dichlorosilane and propane in hydrogen ambient at 300 Torr and 1600 C.
The method of 10, wherein substantially circular graphene regions are defined using photolithography followed by O2 plasma reactive-ion etching.
The method of 16, wherein the substantially circular graphene mesa regions have a diameter of substantially 250 μm.
The method of 10, wherein the thickness of the EG top electrode layer is ranges from 1 ML to 20 ML.
Dependencies are inferred from the claim text.