H10D 10/061
Of lateral bjts
Official title: {of lateral BJTs (of heterojunction BJTs H10D10/021; of thin film BJTs H10D10/041)}
H10D10/061 (Of lateral bjts) appears on 414 US grants and 402 published applications in this corpus.
Search patents in H10D- Granted patents
- 414
- Published applications
- 402
- Assignees
- 115
- Inventors
- 623
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 2 | 0 |
| 1985 | 4 | 0 |
| 1986 | 2 | 0 |
| 1987 | 1 | 0 |
| 1988 | 1 | 0 |
| 1989 | 0 | 0 |
| 1990 | 2 | 0 |
| 1991 | 7 | 0 |
| 1992 | 1 | 0 |
| 1993 | 7 | 0 |
| 1994 | 7 | 0 |
| 1995 | 6 | 0 |
| 1996 | 4 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 2 | 0 |
| 2000 | 6 | 0 |
| 2001 | 1 | 1 |
| 2002 | 6 | 5 |
| 2003 | 5 | 5 |
| 2004 | 4 | 3 |
| 2005 | 5 | 15 |
| 2006 | 5 | 8 |
| 2007 | 7 | 9 |
| 2008 | 9 | 5 |
| 2009 | 3 | 1 |
| 2010 | 5 | 11 |
| 2011 | 7 | 6 |
| 2012 | 4 | 5 |
| 2013 | 8 | 13 |
| 2014 | 19 | 27 |
| 2015 | 31 | 31 |
| 2016 | 34 | 28 |
| 2017 | 35 | 27 |
| 2018 | 26 | 16 |
| 2019 | 23 | 26 |
| 2020 | 24 | 12 |
| 2021 | 10 | 13 |
| 2022 | 10 | 12 |
| 2023 | 25 | 53 |
| 2024 | 30 | 22 |
| 2025 | 13 | 31 |
| 2026 | 12 | 17 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Lateral bipolar junction transistor device and method of forming same29 Sep 2026US 12,747,993 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device with enhanced avalanche ruggedness29 Sep 2026US 12,751,053 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Bipolar transistor structures with cavity below extrinsic base and methods to form same15 Sep 2026US 12,740,113 B2GLOBALFOUNDRIES U. S. Inc.
- Electrostatic discharge circuitry for a high-voltage semiconductor device1 Sep 2026US 12,727,182 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method of forming the same30 Jun 2026US 12,672,331 B2Powerchip Semiconductor Manufacturing Corporation
- Electrostatic discharge circuitry for a high-voltage semiconductor device8 Oct 2026US 2026/0313927 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Bipolar junction transistors with nanosheet structures and methods for manufacturing the same1 Oct 2026US 2026/0304808 A1Tokyo Electron Limited
- Semiconductor device and methods of formation13 Aug 2026US 2026/0239746 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Lateral transistors6 Aug 2026US 2026/0231451 A1GLOBALFOUNDRIES U. S. Inc.
- Layer-subtractive semiconductor processing25 Jun 2026US 2026/0181927 A1
Most cited
By later US patents
- Isolated complementary MOS devices in epi-less substrate71US 6,900,091 B2Advanced Analogic Technologies, Inc. · 2005
- NPN type lateral transistor with minimal substrate operation interference58US 5,027,184 ARockwell International Corporation · 1991
- Process for producing NPN type lateral transistor with minimal substrate operation interference54US 4,437,226 ARockwell International Corporation · 1984
- Complementary analog bipolar transistors with trench-constrained isolation diffusion43US 6,943,426 B2Advanced Analogic Technologies, Inc. · 2005
- Base for a NPN bipolar transistor42US 6,822,314 B2Intersil Americas Inc. · 2004