Semiconductor device and methods of formation

A method, comprising:

• forming a plurality of shallow trench isolation (STI) regions in a substrate of a semiconductor device;
• forming, for a PNP electrostatic discharge (ESD) triggering device of the semiconductor device, a p-doped emitter in the substrate and between a first STI region and a second STI region of the plurality of STI regions,
• wherein the first STI region and the second STI region abut a plurality of doped regions of the p-doped emitter;
• forming, for the PNP ESD triggering device, a p-doped collector in the substrate and between the second STI region and a third STI region of the plurality of STI regions,
• wherein the second STI region and the third STI region are spaced apart from one or more doped regions of the p-doped collector;
• and
• forming a plurality of resist protective oxide (RPO) structures on the substrate,
• wherein a first RPO structure of the plurality of RPO structures partially overlaps the first STI region,
• wherein a second RPO structure of the plurality of RPO structures partially overlaps the second STI region, and
• wherein a third RPO structure of the plurality of RPO structures partially overlaps the third STI region.

A semiconductor device, comprising:

• a substrate;
• a first plurality of shallow trench isolation (STI) regions in the substrate;
• a second plurality of STI regions in the substrate,
• wherein the first plurality of STI regions have a larger dimension in a lateral direction along a top surface of the substrate than a dimension of the second plurality of STI regions in the lateral direction;
• a first doped structure in the substrate and between a first STI region of the first plurality of STI regions and a second STI region of the first plurality of STI regions;
• a second doped structure in the substrate and between the second STI region of the first plurality of STI regions and a first STI region of the second plurality of STI regions,
• wherein the second doped structure comprises a doped well, and one or more doped regions in the doped well, and
• wherein the first STI region of the second plurality of STI regions is spaced apart from the one or more doped regions;
• a third doped structure in the substrate and between the first STI region of the second plurality of STI regions and a second STI region of the second plurality of STI regions,
• wherein the third doped structure comprises a plurality of doped regions, and
• wherein the first STI region of the second plurality of STI regions and the second STI region of the second plurality of STI regions are in contact with the plurality of doped regions;
• and
• a plurality of resist protective oxide (RPO) structures on the substrate,
• wherein an RPO structure of the plurality of RPO structures is over a portion of the second doped structure and over a portion of a space between the first STI region of the second plurality of STI regions and the one or more doped regions.