H10D 10/041
Of thin-film bjts
Official title: {of thin-film BJTs (of heterojunction BJTs H10D10/021)}
H10D10/041 (Of thin-film bjts) appears on 193 US grants and 136 published applications in this corpus.
Search patents in H10D- Granted patents
- 193
- Published applications
- 136
- Assignees
- 75
- Inventors
- 312
- Latest grant
- 26 May 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1990 | 3 | 0 |
| 1991 | 3 | 0 |
| 1992 | 4 | 0 |
| 1993 | 0 | 0 |
| 1994 | 8 | 0 |
| 1995 | 8 | 0 |
| 1996 | 9 | 0 |
| 1997 | 8 | 0 |
| 1998 | 9 | 0 |
| 1999 | 4 | 0 |
| 2000 | 1 | 0 |
| 2001 | 8 | 0 |
| 2002 | 2 | 7 |
| 2003 | 1 | 6 |
| 2004 | 7 | 6 |
| 2005 | 6 | 2 |
| 2006 | 2 | 6 |
| 2007 | 2 | 4 |
| 2008 | 1 | 9 |
| 2009 | 4 | 4 |
| 2010 | 9 | 5 |
| 2011 | 3 | 5 |
| 2012 | 4 | 5 |
| 2013 | 7 | 2 |
| 2014 | 5 | 11 |
| 2015 | 8 | 6 |
| 2016 | 8 | 4 |
| 2017 | 11 | 7 |
| 2018 | 8 | 7 |
| 2019 | 8 | 6 |
| 2020 | 4 | 4 |
| 2021 | 3 | 2 |
| 2022 | 2 | 2 |
| 2023 | 9 | 18 |
| 2024 | 7 | 4 |
| 2025 | 4 | 4 |
| 2026 | 3 | 0 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Super-β bipolar junction transistor and manufacturing method therefor26 May 2026US 12,641,839 B2Csmc Technologies Fab2 Co., Ltd.
- Field-effect transistor structure including passive device or bipolar junction transistor with back side power distribution network (BSPDN)26 May 2026US 12,641,865 B2Samsung Electronics Co., Ltd.
- Utilization of sacrificial material for current electrode formation28 Apr 2026US 12,615,788 B2NXP B. V.
- Monolithic integration of diverse device types with shared electrical isolation9 Dec 2025US 12,495,610 B2GLOBALFOUNDRIES U. S. Inc.
- Semiconductor device and method for forming the same14 Oct 2025US 12,446,283 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Amorphous metal thin film transistors25 Dec 2025US 2025/0393225 A1Amorphyx, Incorporated
- Compound semiconductor device for high power and high frequency operation18 Sep 2025US 2025/0294864 A1Mitsubishi Electric Research Laboratories, Inc.
- Power semiconductor device19 Jun 2025US 2025/0204022 A1DB HiTek Co., Ltd.
- Utilization of sacrificial material for current electrode formation6 Mar 2025US 2025/0081486 A1NXP B. V.
- Diode-containing component and method for manufacturing the same28 Nov 2024US 2024/0395802 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Printable semiconductor structures and related methods of making and assembling422US 7,799,699 B2The Board of Trustees of the University of Illinois · 2010
- Printable semiconductor structures and related methods of making and assembling272US 8,039,847 B2The Board of Trustees of the University of Illinois · 2011
- Printable semiconductor structures and related methods of making and assembling223US 8,394,706 B2The Board of Trustees of the University of Illinois · 2013
- Control of dopant diffusion from buried layers in bipolar integrated circuits97US 8,247,300 B2Texas Instruments Incorporated · 2012
- FET and/or bipolar devices formed in thin vertical silicon on insulator (SOI) structures76US 5,581,101 AInternational Business Machines Corporation · 1996