Diode-containing component and method for manufacturing the same

A semiconductor structure comprising:

• a base structure;
• a first portion disposed on the base structure and made of a first semiconductor material;
• a second portion disposed on the base structure and spaced apart from the first portion, the second portion being made of a second semiconductor material which has a conductivity type opposite to that of the first semiconductor material;
• a first stack disposed on the base structure and between the first portion and the second portion, the first stack including a plurality of first semiconductor regions spaced apart from each other such that each of the first semiconductor regions extends between the first portion and the second portion, the first semiconductor regions having a dopant concentration which is lower than that of each of the first portion and the second portion;
• and two isolation portions each of which is disposed between the base structure and a corresponding one of the first portion and the second portion, an upper surface of each of the isolation portions being at a level lower than a level of a lower surface of a bottommost one of the first semiconductor regions, and higher than a level of an upper surface of the base structure.

A method for manufacturing a semiconductor structure, comprising:

• forming a base structure;
• forming a first portion on the base structure, the first portion being made of a first semiconductor material;
• forming a second portion on the base structure and spaced apart from the first portion in an X direction, the second portion being made of a second semiconductor material which has a conductivity type opposite to that of the first semiconductor material;
• and
• forming a first stack on the base structure and between the first portion and the second portion, the first stack including a plurality of first semiconductor regions spaced apart from each other in a Z direction transverse to the X direction, and a plurality of first dielectric regions disposed to alternate with the first semiconductor regions in the Z direction such that each of the first semiconductor regions and the first dielectric regions extends between the first portion and the second portion, the first semiconductor regions having a dopant concentration which is lower than that of each of the first portion and the second portion.