H10D 10/021
Of heterojunction bjts [hbt]
Official title: {of heterojunction BJTs [HBT]}
H10D10/021 (Of heterojunction bjts [hbt]) appears on 1,650 US grants and 1,405 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,650
- Published applications
- 1,405
- Assignees
- 344
- Inventors
- 1,937
- Latest grant
- 21 Jul 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1985 | 1 | 0 |
| 1986 | 3 | 0 |
| 1987 | 2 | 0 |
| 1988 | 6 | 0 |
| 1989 | 9 | 0 |
| 1990 | 14 | 0 |
| 1991 | 16 | 0 |
| 1992 | 31 | 0 |
| 1993 | 26 | 0 |
| 1994 | 30 | 0 |
| 1995 | 35 | 0 |
| 1996 | 21 | 0 |
| 1997 | 30 | 0 |
| 1998 | 27 | 0 |
| 1999 | 20 | 0 |
| 2000 | 19 | 0 |
| 2001 | 24 | 20 |
| 2002 | 59 | 74 |
| 2003 | 85 | 88 |
| 2004 | 105 | 95 |
| 2005 | 85 | 100 |
| 2006 | 65 | 64 |
| 2007 | 61 | 68 |
| 2008 | 45 | 64 |
| 2009 | 47 | 29 |
| 2010 | 50 | 31 |
| 2011 | 36 | 29 |
| 2012 | 27 | 34 |
| 2013 | 40 | 50 |
| 2014 | 48 | 51 |
| 2015 | 54 | 58 |
| 2016 | 49 | 56 |
| 2017 | 63 | 44 |
| 2018 | 61 | 56 |
| 2019 | 62 | 63 |
| 2020 | 56 | 58 |
| 2021 | 63 | 57 |
| 2022 | 41 | 44 |
| 2023 | 52 | 59 |
| 2024 | 47 | 36 |
| 2025 | 22 | 48 |
| 2026 | 13 | 29 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Heterojunction bipolar transistors including an intrinsic base with an asymmetrical dopant depth profile21 Jul 2026US 12,690,206 B2GLOBALFOUNDRIES U. S. Inc.
- Bipolar transistors14 Jul 2026US 12,684,790 B2GLOBALFOUNDRIES U. S. Inc.
- Method to suppress base poly linkup overgrowth into the emitter cavity during silicon germanium selective epitaxy growth30 Jun 2026US 12,672,296 B2Texas Instruments Incorporated
- Method for producing a semiconductor chip2 Jun 2026US 12,648,165 B2Imec Vzw
- Type I-II transistor with a manufacturable ledge5 May 2026US 12,622,007 B1ElectroPhotonic-IC Inc.
- Heterojunction bipolar transistor8 Oct 2026US 2026/0314408 A1GLOBALFOUNDRIES U. S. Inc.
- Iii-v heterojunction bipolar transistor and its manufacturing method1 Oct 2026US 2026/0304809 A1Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Lateral heterojunction bipolar transistor10 Sep 2026US 2026/0271357 A1GLOBALFOUNDRIES U. S. Inc.
- Lateral transistors6 Aug 2026US 2026/0231451 A1GLOBALFOUNDRIES U. S. Inc.
- Structure with spacer on intrinsic base pedestal and related methods6 Aug 2026US 2026/0231488 A1GLOBALFOUNDRIES U. S. Inc.
Most cited
By later US patents
- Dopant precursors and processes596US 6,743,738 B2ASM America, Inc. · 2004
- Field plate in heterojunction bipolar transistor with improved break-down voltage512US 9,324,846 B1Globalfoundries Inc. · 2016
- Strained-semiconductor-on-insulator device structures396US 6,995,430 B2AmberWave Systems Corporation · 2006
- Alignment techniques for epitaxial growth processes288US 6,294,018 B1Lucent Technologies Inc. · 2001
- Process for deposition of semiconductor films239US 6,821,825 B2ASM America, Inc. · 2004