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US 12,684,790 B2Granted
Bipolar transistors
AssigneeGlobalFoundries U.S. Inc.
InventorsAlexander M. Derrickson, Kaustubh Shanbhag, Vibhor Jain, Judson R. Holt
Life of this patent
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Abstract
The present disclosure relates to semiconductor structures and, more particularly, to bipolar transistors and methods of manufacture. The structure includes: a collector; a base region above the collector; an emitter laterally connecting to the base region; and an extrinsic base connecting to the base region.
Claims20
A structure comprising:
- a collector;
- a base region above the collector;
- an emitter laterally connecting to the base region;
- an extrinsic base connecting to the base region;
- and
- a gate electrode which includes a bottom surface in direct contact with a top surface of the base region.
3 more elements
A structure comprising:
- a semiconductor region of a first conductivity type;
- a sub-collector above the semiconductor region and comprising a second conductivity type;
- a base region above the sub-collector, and further comprises the first conductivity type;
- a gate structure above the base region;
- an emitter on a first side of the gate structure;
- and
- an extrinsic base on a second side of the gate structure,
- wherein the emitter is on both sides of an “I” shape of the gate structure.
5 more elements
A method comprising:
- forming a collector;
- forming a base region above the collector;
- forming an emitter laterally connecting to the base region;
- forming an extrinsic base connecting to the base region;
- and
- forming a gate electrode which includes a bottom surface in direct contact with a top surface of the base region.
3 more elements
Dependencies are inferred from the claim text.