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US 7,781,826 B2Granted
Circuit configuration and manufacturing processes for vertical transient voltage suppressor (TVS) and EMI filter
AssigneeAlpha and Omega Semiconductor Incorporated
InventorsShekar Mallikararjunaswamy, Madhur Bobde
Life of this patent
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Abstract
A vertical TVS (VTVS) circuit includes a semiconductor substrate for supporting the VTVS device thereon having a heavily doped layer extending to the bottom of substrate. Deep trenches are provided for isolation between multi-channel VTVS. Trench gates are also provided for increasing the capacitance of VTVS with integrated EMI filter.
Claims12
A multi-channel vertical transient voltage suppressing (VTVS) device comprising:
- a substrate comprising a heavily doped layer of a first conductivity type extending to a bottom surface of said substrate for supporting a plurality of vertical bipolar transistors separated by isolated trenches as a multiple channel vertical transient voltage suppressing (TVS) circuit wherein each of said isolated trenches is totally insolated from external electrodes connections that electrically connect to said plurality of vertical bipolar transistors and extends downwardly to a bottom part of said vertical bipolar transistors to totally isolate a vertical current conducting in each of said vertical bipolar transistors.
Dependencies are inferred from the claim text.