Isolation in a semiconductor device

A semiconductor device for integrating multiple transistors, the semiconductor device comprising:

• a wafer substrate including a first region and a second region, the first region defining at least a portion of at least one first transistor, the second region defining at least a portion of at least one second transistor;
• a backplate including a first region and a second region, the first region of the backplate contacting the first region of the wafer substrate, the second region of the backplate contacting the second region of the wafer substrate;
• an electrode coupled to a terminal of the at least one first transistor, the terminal contacting the first region of the wafer substrate;
• an isolation area located between the first region of the wafer substrate and the second region of the wafer substrate;
• and
• an encapsulation material, the encapsulation material including a first portion located within the isolation area and a second portion extending from the first portion to at least a portion of a first-aft edge of the electrode, the encapsulation material including a third portion that extends between a second edge of the electrode and an edge of the semiconductor device.

A semiconductor device for integrating multiple transistors, the semiconductor device comprising:

• a wafer substrate including a first region and a second region, the first region defining at least a portion of at least one first transistor, the second region defining at least a portion of at least one second transistor;
• an isolation area located between the first region and the second region;
• at least one terminal of the at least one first transistor at least partially embedded in the first region of the wafer substrate;
• at least one terminal of the at least one second transistor at least partially embedded in the second region of the wafer substrate;
• an electrode coupled to the at least one terminal of the at least one first transistor;
• and
• an encapsulation material, the encapsulation material including a first portion located within the isolation area and a second portion extending from the first portion to at least a portion of a first edge of the electrode, the encapsulation material including a third portion that extends between a second edge of the electrode and an edge of the semiconductor device.