Semiconductor device with bi-directional double-base trench power switches
AssigneeIdeal Power Inc.
InventorsJiankang Bu, Constantin Bulucea, Alireza Mojab, Jeffrey Knapp, Robert Daniel Brdar
Life of this patent
Estimating the term…
Abstract
Bi-directional trench power switches. At least one example is a semiconductor device comprising: an upper base region associated with a first side of a substrate of semiconductor material; an upper-CE trench defined on the first side, the upper-CE trench defines a proximal opening at the first side and a distal end within the substrate; an upper collector-emitter region disposed at the distal end of the upper-CE trench; a lower base region associated with a second side of substrate; and a lower collector-emitter region associated with the second side.
Claims20
A semiconductor device comprising:
- an upper base region associated with a first side of a substrate of semiconductor material;
- an upper-CE trench defined on the first side, the upper-CE trench defines a proximal opening at the first side and a distal end within the substrate;
- an upper collector-emitter region disposed at the distal end of the upper-CE trench, wherein a dopant that forms the upper collector-emitter region does not intersect the first side of the substrate;
- a lower base region associated with a second side of the substrate;
- and
- a lower collector-emitter region associated with the second side.
A semiconductor device comprising:
- an upper base region associated with a first side of a substrate of semiconductor material;
- an upper-CE trench defined on the first side, the upper-CE trench defines a proximal opening at the first side and a distal end within the substrate;
- an upper collector-emitter region disposed at the distal end of the upper-CE trench;
- a lower base region associated with a second side of the substrate;
- and
- a lower collector-emitter region associated with the second side;
- a lower-CE trench defined on the second side, the lower-CE trench defines a proximal opening at the second side and a distal end within substrate;
- and
- wherein the lower collector-emitter region is disposed at the distal end of the lower-CE trench.
A bidirectional double-base bipolar junction transistor comprising:
- a first-upper trench defined on a first side of a substrate of semiconductor material, the first-upper trench defines a proximal opening at the first side and a distal end within the substrate;
- an upper collector-emitter region disposed at the distal end of the first-upper trench;
- a second-upper trench defined on the first side, the second-upper trench defines a proximal opening at the first side and a distal end within the substrate;
- an upper base region disposed at the distal end of the second-upper trench;
- a lower base region associated with a second side of the substrate;
- and
- a lower collector-emitter region associated with the second side.
Dependencies are inferred from the claim text.