H10D 10/052
Of inverted vertical bjts
Official title: {of inverted vertical BJTs}
H10D10/052 (Of inverted vertical bjts) appears on 26 US grants and 23 published applications in this corpus.
Search patents in H10D- Granted patents
- 26
- Published applications
- 23
- Assignees
- 14
- Inventors
- 63
- Latest grant
- 5 Sep 2023
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 1 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 2 | 0 |
| 1992 | 1 | 0 |
| 1993 | 1 | 0 |
| 1994 | 0 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 1 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 1 | 2 |
| 2006 | 0 | 1 |
| 2007 | 1 | 0 |
| 2008 | 0 | 1 |
| 2009 | 0 | 0 |
| 2010 | 0 | 0 |
| 2011 | 1 | 2 |
| 2012 | 0 | 0 |
| 2013 | 1 | 2 |
| 2014 | 1 | 1 |
| 2015 | 1 | 2 |
| 2016 | 2 | 2 |
| 2017 | 1 | 1 |
| 2018 | 1 | 2 |
| 2019 | 5 | 2 |
| 2020 | 0 | 1 |
| 2021 | 3 | 0 |
| 2022 | 0 | 0 |
| 2023 | 1 | 1 |
| 2024 | 0 | 0 |
| 2025 | 0 | 1 |
| 2026 | 0 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Bipolar junction transistor with vertically integrated resistor30 Nov 2021US 11,189,701 B1International Business Machines Corporation
- Current source using emitter region as base region isolation structure16 Mar 2021US 10,950,601 B2Nexchip Semiconductor Corporation
- Bipolar junction transistor (BJT) for liquid flow biosensing applications without a reference electrode and large sensing area12 Jan 2021US 10,892,346 B2International Business Machines Corporation
- Bipolar junction transistor (BJT) for liquid flow biosensing applications without a reference electrode and large sensing area10 Sep 2019US 10,411,109 B2International Business Machines Corporation
- Method for producing an electrode, electrode, alkaline battery, and uses of the alkaline battery26 Mar 2026US 2026/0088271 A1Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e. V.
- Bipolar junction transistor with dielectric isolation structures17 Jul 2025US 2025/0234634 A1
- Bipolar junction transistors with duplicated terminals30 Mar 2023US 2023/0096328 A1GLOBALFOUNDRIES U. S. Inc.
- Current source and method of forming same27 Aug 2020US 2020/0273859 A1Nexchip Semiconductor Corporation
- Bipolar junction transistor (bjt) for liquid flow biosensing applications without a reference electrode and large sensing area10 Oct 2019US 2019/0312125 A1International Business Machines Corporation
Most cited
By later US patents
- Method for improving transistor performance through reducing the salicide interface resistance67US 6,949,482 B2Intel Corporation · 2005
- Method for improving transistor performance through reducing the salicide interface resistance23US 7,274,055 B2Intel Corporation · 2007
- Reducing base resistance of a BJT by forming a self aligned silicide in the single crystal region of the extrinsic base20US 5,139,961 ANational Semiconductor Corporation · 1992
- Self-aligned silicided base bipolar transistor and resistor and method of fabrication16US 5,045,483 ANational Semiconductor Corporation · 1991
- Method of fabricating a double polysilicon bipolar transistor which is compatible with a method of fabricating CMOS transistors14US 5,037,768 AMotorola, Inc. · 1991