H10D 1/696
Comprising multiple layers
Official title: {comprising multiple layers, e.g. comprising a barrier layer and a metal layer (barrier layers to prevent diffusion of hydrogen or oxygen in perovskite based capacitors H10D1/688)}
H10D1/696 (Comprising multiple layers) appears on 1,599 US grants and 1,698 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,599
- Published applications
- 1,698
- Assignees
- 300
- Inventors
- 2,603
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1992 | 2 | 0 |
| 1993 | 3 | 0 |
| 1994 | 3 | 0 |
| 1995 | 9 | 0 |
| 1996 | 10 | 0 |
| 1997 | 12 | 0 |
| 1998 | 14 | 0 |
| 1999 | 13 | 0 |
| 2000 | 33 | 0 |
| 2001 | 108 | 53 |
| 2002 | 101 | 133 |
| 2003 | 98 | 108 |
| 2004 | 119 | 109 |
| 2005 | 81 | 83 |
| 2006 | 78 | 68 |
| 2007 | 42 | 51 |
| 2008 | 37 | 28 |
| 2009 | 32 | 33 |
| 2010 | 26 | 33 |
| 2011 | 26 | 16 |
| 2012 | 22 | 38 |
| 2013 | 39 | 35 |
| 2014 | 49 | 43 |
| 2015 | 28 | 41 |
| 2016 | 41 | 38 |
| 2017 | 33 | 32 |
| 2018 | 28 | 42 |
| 2019 | 38 | 34 |
| 2020 | 35 | 59 |
| 2021 | 41 | 69 |
| 2022 | 61 | 91 |
| 2023 | 75 | 142 |
| 2024 | 93 | 126 |
| 2025 | 107 | 100 |
| 2026 | 62 | 93 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Integrated circuits with high dielectric constant interfacial layering25 Aug 2026US 12,720,778 B2Intel Corporation
- Semiconductor structure and method of forming the same25 Aug 2026US 12,720,779 B2Nanya Technology Corporation
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- Semiconductor device and method for manufacturing semiconductor device1 Oct 2026US 2026/0304803 A1Jusung Engineering Co., Ltd.
- Semiconductor device structure with electrode layer1 Oct 2026US 2026/0304804 A1Taiwan Semiconductor Manufacturing Company.Ltd
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Most cited
By later US patents
- Method of forming metal layer using atomic layer deposition and semiconductor device having the metal layer as barrier metal layer or upper or lower electrode of capacitor1,063US 6,287,965 B1Samsung Electronics Co., Ltd. · 2001
- Semiconductor devices having metal layers as barrier layers on upper or lower electrodes of capacitors597US 6,590,251 B2Samsung Electronics Co., Ltd. · 2003
- Integrated circuit devices having buffer layers therein which contain metal oxide stabilized by heat treatment under low temperature375US 6,144,060 ASamsung Electronics Co., Ltd. · 2000
- High dielectric constant capacitor and method of manufacture261US 5,335,138 AMicron Semiconductor, Inc. · 1994
- Capacitor compatible with high dielectric constant materials having two independent insulative layers and the method for forming same215US 5,392,189 AMicron Semiconductor, Inc. · 1995