Semiconductor device structure with electrode layer

A semiconductor device structure, comprising:

• a substrate;
• a first electrode layer over the substrate;
• a capacitor dielectric layer over the first electrode layer and the substrate, wherein the capacitor dielectric layer conformally covers a top surface and a sidewall of the first electrode layer;
• a second electrode layer conformally covering the capacitor dielectric layer;
• and
• a third electrode layer conformally covering the second electrode layer, wherein a first portion of the third electrode layer over the sidewall of the first electrode layer has a first surface roughness greater than a second surface roughness of a second portion of the third electrode layer over the top surface of the first electrode layer and is thinner than the second portion.

A semiconductor device structure, comprising:

• a substrate;
• a first electrode layer over the substrate;
• a capacitor dielectric layer over the first electrode layer and the substrate, wherein the capacitor dielectric layer conformally covers a first top surface and a sidewall of the first electrode layer;
• a second electrode layer conformally covering the capacitor dielectric layer;
• a third electrode layer conformally covering the second electrode layer, wherein a first portion of the third electrode layer over the sidewall of the first electrode layer has a first surface roughness greater than a second surface roughness of a second portion of the third electrode layer over the first top surface of the first electrode layer;
• a dielectric layer over the third electrode layer;
• and
• a conductive via over the second portion of the third electrode layer and passing through the dielectric layer.