Semiconductor structure and method of forming the same
AssigneeNanya Technology Corporation
InventorShih-Ting Huang
Life of this patent
Estimating the term…
Abstract
A method of forming a semiconductor structure includes following steps. A substrate is provided. The substrate has an active region, an isolation structure adjacent to the active region, and a contact on the active region. A dielectric stack is formed on the substrate. A poly layer is formed on the dielectric stack. The poly layer and the dielectric stack are etched to form an opening to expose the contact of the substrate. A conductive film is formed in the opening and an ALD oxide layer is deposited on a sidewall of the opening. In addition, a semiconductor structure is also disclosed herein.
Claims7
A semiconductor structure, comprising:
- a substrate having an active region, an isolation structure adjacent to the active region, and a contact on the active region;
- a dielectric stack on the substrate;
- a poly layer formed on the dielectric stack, wherein the poly layer and the dielectric stack comprises an opening;
- a conductive film formed in the opening;
- and
- an ALD oxide layer sealing a top portion of the opening to avoid a chemical-mechanical polishing slurry falling into the opening.
Dependencies are inferred from the claim text.