Integrated circuit devices having buffer layers therein which contain metal oxide stabilized by heat treatment under low temperature

An integrated circuit capacitor, comprising:

• a first electrically insulating layer;
• a first metal layer pattern on said first electrically insulating layer;
• a first high dielectric layer on said first metal layer pattern, opposite said first electrically insulating layer;
• a second metal layer pattern on said first high dielectric layer, opposite said first metal layer pattern;
• an aluminum oxide buffer layer formed by atomic layer deposition and stabilized by heat treatment at a temperature in a range between about 350.degree. C. and 600.degree. C., on exposed surfaces of said first metal layer pattern, said first high dielectric layer and said second metal layer pattern;
• and
• a second electrically insulating layer on said buffer layer.

An integrated circuit capacitor, comprising:

• a semiconductor substrate;
• a first capacitor electrode on said semiconductor substrate and electrically connected thereto;
• a capacitor dielectric layer on said first capacitor electrode;
• a second capacitor electrode on said capacitor dielectric layer, opposite said first capacitor electrode;
• an aluminum oxide layer formed by atomic layer deposition on said second capacitor electrode, said aluminum oxide layer stabilized by heat treatment at a temperature in a range between about 350.degree. C. and 600.degree. C.;
• and
• a first conductive layer pattern formed on said aluminum oxide layer.

An integrated circuit capacitor, comprising:

• a semiconductor substrate;
• a first capacitor electrode on said semiconductor substrate and electrically connected thereto;
• a capacitor dielectric layer on said first capacitor electrode;
• a second capacitor electrode on said capacitor dielectric layer, opposite said first capacitor electrode;
• an aluminum oxide buffer layer formed by atomic layer deposition on said second capacitor electrode, said aluminum oxide buffer layer stabilized by heat treatment at a temperature in a range between about 350.degree. C. and 600.degree. C.;
• and
• a first conductive layer pattern formed on said aluminum oxide buffer layer.

An integrated circuit capacitor, comprising:

• a first electrically insulating layer;
• a first metal layer pattern on said first electrically insulating layer;
• a first high dielectric layer on exposed surfaces of said first metal layer pattern and on said first electrically insulating layer, said first high dielectric layer being patterned in cell block units;
• a second metal layer on said first high dielectric layer, opposite said first metal layer pattern, said second metal layer being patterned in cell block units simultaneously with said first high dielectric layer;
• an aluminum oxide buffer layer formed by atomic layer deposition and stabilized by heat treatment at a temperature in a range between about 350.degree. C. and 600.degree. C., on said second metal layer;
• and
• a second electrically insulating layer on said buffer layer.