H10B 12/482
Bit lines
Official title: {Bit lines}
H10B12/482 (Bit lines) appears on 2,799 US grants and 4,080 published applications in this corpus.
Search patents in H10B- Granted patents
- 2,799
- Published applications
- 4,080
- Assignees
- 178
- Inventors
- 3,822
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 1 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 7 | 0 |
| 2000 | 34 | 0 |
| 2001 | 72 | 38 |
| 2002 | 82 | 87 |
| 2003 | 69 | 63 |
| 2004 | 94 | 117 |
| 2005 | 75 | 88 |
| 2006 | 70 | 86 |
| 2007 | 55 | 61 |
| 2008 | 51 | 49 |
| 2009 | 54 | 48 |
| 2010 | 47 | 52 |
| 2011 | 38 | 76 |
| 2012 | 58 | 118 |
| 2013 | 83 | 96 |
| 2014 | 106 | 87 |
| 2015 | 74 | 99 |
| 2016 | 101 | 82 |
| 2017 | 68 | 34 |
| 2018 | 59 | 67 |
| 2019 | 79 | 103 |
| 2020 | 101 | 132 |
| 2021 | 125 | 182 |
| 2022 | 132 | 329 |
| 2023 | 203 | 506 |
| 2024 | 235 | 492 |
| 2025 | 338 | 495 |
| 2026 | 287 | 493 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Memory device including capacitor contacts having different materials and method for preparing the same6 Oct 2026US 12,757,374 B2Nanya Technology Corporation
- Memory device having improved P—N junction and manufacturing method thereof6 Oct 2026US 12,757,377 B2Nanya Technology Corporation
- Semiconductor memory device6 Oct 2026US 12,757,378 B2Samsung Electronics Co., Ltd.
- Memory device having improved P-N junction and manufacturing method thereof6 Oct 2026US 12,757,380 B2Nanya Technology Corporation
- Semiconductor structure having dielectric liner and method of manufacturing the same6 Oct 2026US 12,757,381 B2Nanya Technology Corporation
- Semiconductor device8 Oct 2026US 2026/0311745 A1Semiconductor Energy Laboratory Co.Ltd.
- Method for manufacturing semiconductor memory device including a bit line mask pattern8 Oct 2026US 2026/0313871 A1Samsung Electronics Co., Ltd.
- Semiconductor device and method for fabricating the same8 Oct 2026US 2026/0313872 A1SK hynix Inc.
- Semiconductor device with low-k spacer8 Oct 2026US 2026/0313877 A1SK hynix Inc.
- Semiconductor structure and method of manufacturing the same8 Oct 2026US 2026/0313878 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Memory cell arrays447US 7,045,834 B2Micron Technology, Inc. · 2006
- Integrated circuit with buried digit line264US 8,102,008 B2Micron Technology, Inc. · 2012
- Reverse construction memory cell263US 7,776,715 B2Micron Technology, Inc. · 2010
- Vertical transistors183US 7,285,812 B2Micron Technology, Inc. · 2007
- Self-aligned diffused source vertical transistors with stack capacitors in a 4F-square memory cell array163US 6,077,745 AInternational Business Machines Corporation · 2000