H01J 37/321
The radio frequency energy being inductively coupled to the plasma
Official title: {the radio frequency energy being inductively coupled to the plasma}
H01J37/321 (The radio frequency energy being inductively coupled to the plasma) appears on 2,537 US grants and 3,061 published applications in this corpus.
Search patents in H01J- Granted patents
- 2,537
- Published applications
- 3,061
- Assignees
- 507
- Inventors
- 4,631
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 2 | 0 |
| 1988 | 1 | 0 |
| 1989 | 4 | 0 |
| 1990 | 5 | 0 |
| 1991 | 2 | 0 |
| 1992 | 4 | 0 |
| 1993 | 4 | 0 |
| 1994 | 8 | 0 |
| 1995 | 22 | 0 |
| 1996 | 30 | 0 |
| 1997 | 29 | 0 |
| 1998 | 42 | 0 |
| 1999 | 65 | 0 |
| 2000 | 103 | 0 |
| 2001 | 121 | 40 |
| 2002 | 109 | 97 |
| 2003 | 97 | 88 |
| 2004 | 72 | 126 |
| 2005 | 48 | 86 |
| 2006 | 51 | 63 |
| 2007 | 43 | 113 |
| 2008 | 33 | 73 |
| 2009 | 42 | 87 |
| 2010 | 57 | 88 |
| 2011 | 48 | 90 |
| 2012 | 53 | 92 |
| 2013 | 51 | 115 |
| 2014 | 69 | 112 |
| 2015 | 89 | 132 |
| 2016 | 96 | 124 |
| 2017 | 108 | 161 |
| 2018 | 104 | 136 |
| 2019 | 144 | 154 |
| 2020 | 125 | 150 |
| 2021 | 122 | 133 |
| 2022 | 107 | 158 |
| 2023 | 76 | 180 |
| 2024 | 106 | 159 |
| 2025 | 147 | 176 |
| 2026 | 95 | 128 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- System and method for delivering pulsed RF power from a single generator to multiple loads6 Oct 2026US 12,755,936 B2Inspiring Atoms Pte Ltd
- Plasma processing apparatus6 Oct 2026US 12,755,937 B2Tokyo Electron Limited
- Filter circuit and plasma processing apparatus6 Oct 2026US 12,755,938 B2Tokyo Electron Limited
- Methods for reducing photoresist and carbon etch rates in an ICP process chamber using a silicon-based chamber pre-coat6 Oct 2026US 12,757,659 B2APPLIED Materials.Inc.
- Plasma processing apparatus29 Sep 2026US 12,749,650 B2Tokyo Electron Limited
- Wave-assisted hybrid plasma source8 Oct 2026US 2026/0311966 A1Tokyo Electron Limited
- Monolithic modular high-frequency plasma source1 Oct 2026US 2026/0302134 A1APPLIED Materials.Inc.
- Metrology Enclosure Including Spectral Reflectometry System for Plasma Processing System Using Direct-Drive Radiofrequency Power Supply1 Oct 2026US 2026/0302144 A1Lam Research Corporation
- Power delivery to a plasma via inductive coupling24 Sep 2026US 2026/0290751 A1AES Global Holdings PTE Ltd.
- Plasma potential adjustment circuit24 Sep 2026US 2026/0290752 A1Tokyo Electron Limited
Most cited
By later US patents
- Temperature control system for semiconductor process chamber652US 6,015,465 AAPPLIED Materials.Inc. · 2000
- Plasma enhanced chemical processing reactor and method593US 5,792,272 AWatkins-Johnson Company · 1998
- Trench fill with HDP-CVD process including coupled high power density plasma deposition572US 6,559,026 B1APPLIED Materials.Inc. · 2003
- Semiconductor substrate process using a low temperature deposited carbon-containing hard mask566US 7,323,401 B2APPLIED Materials.Inc. · 2008
- Low temperature CVD process with selected stress of the CVD layer on CMOS devices559US 7,393,765 B2APPLIED Materials.Inc. · 2008