Temperature control system for semiconductor process chamber
AssigneeApplied Materials, Inc.
InventorsArnold Kholodenko, Ke Ling Lee, Maya Shendon, Efrain Quiles
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AssigneeApplied Materials, Inc.
InventorsArnold Kholodenko, Ke Ling Lee, Maya Shendon, Efrain Quiles
Estimating the term…
A temperature control system 10 is used to control the temperature of a chamber surface 15, such as a convoluted external surface, of a process chamber 25 that is used to process a semiconductor substrate 30. The temperature control system 10 comprises a vapor chamber 100 that forms an enclosure adjoining or surrounding the process chamber surface 15. A fluid distributor 115 in the vapor chamber 100 applies a fluid film 130 onto the process chamber surface 15. Vaporization of the fluid film 130 from the chamber surface 15 controls the temperature of the chamber surface. Optionally, a vent 165 in the vapor chamber 100 can be used to adjust the vaporization temperature of the fluid in the vapor chamber.
An apparatus capable of processing a substrate, the apparatus comprising:
The plasma processing apparatus capable of processing a substrate in a plasma, the apparatus comprising:
Dependencies are inferred from the claim text.