Plasma processing apparatus

A plasma processing apparatus comprising:

• a chamber accommodating a substrate;
• a window member forming an upper portion of the chamber;
• a gas inlet port disposed in at least one of a sidewall of the chamber and the window member, and configured to supply a gas into the chamber;
• and
• an antenna disposed above the chamber with the window member interposed therebetween, having a linear shape and made of a conductive material, and configured to produce plasma from the gas supplied into the chamber by radiating a radio frequency (RF) power into the chamber,
• wherein the antenna includes:
• a first coil to which the RF power is supplied, the first coil having a spiral shape centering on a central axis of the first coil;
• and
• a plurality of second coils inductively coupled with the first coil and arranged around the first coil to be rotationally symmetrical with respect to the central axis of the first coil,
• wherein each of the plurality of second coils has a shape of a part of an arc, respectively, and the plurality of second coils are arranged in a direction so that the arc is not concentric with the spiral shape of the first coil,
• wherein one ends of the second coils are connected one-to-one to variable capacitors, each of currents flowing through each of the plurality of second coils being independently adjusted by adjusting capacitances of the variable capacitors.