Wave-assisted hybrid plasma source
AssigneeTokyo Electron Limited
InventorsQiang Wang, Shyam Sridhar, Peter Lowell George Ventzek, Mitsunori Ohata
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Abstract
A plasma processing apparatus includes a processing chamber including a dielectric window, a source coil disposed outside the processing chamber at the dielectric window, a secondary coil configured to receive lower frequency RF power coupled to the second coil at a secondary frequency, and one or more magnets configured to generate a direct current magnetic field in the plasma. The source coil is configured to generate plasma in the processing chamber using radio frequency source power coupled to the source coil at a source frequency. The secondary frequency is less than the source frequency.
Claims20
A plasma processing apparatus comprising:
- a processing chamber comprising a dielectric window;
- a source coil disposed outside the processing chamber at the dielectric window, the source coil being configured to generate plasma in the processing chamber using radio frequency (RF) source power coupled to the source coil at a source frequency;
- a secondary coil configured to receive lower frequency RF power coupled to the second coil at a secondary frequency less than the source frequency;
- and
- one or more magnets configured to generate a direct current (DC) magnetic field in the plasma.
A plasma processing system comprising:
- a processing chamber comprising a dielectric window;
- a source power supply configured to generate radio frequency (RF) source power at a source frequency;
- a source coil electrically coupled to the source power supply and disposed outside the processing chamber at the dielectric window, the source coil being configured to generate plasma in the processing chamber using the RF source power;
- a secondary power supply configured to generate lower frequency RF power at a secondary frequency less than the source frequency;
- a secondary coil electrically coupled to the secondary power supply and configured to receive the lower frequency RF power;
- and
- one or more magnets configured to generate a direct current (DC) magnetic field in the plasma.
A method for plasma processing of a substrate, the method comprising:
- generating plasma in a processing chamber by applying radio frequency (RF) source power at a source frequency to a source coil;
- generating a direct current (DC) magnetic field in the processing chamber;
- applying lower frequency RF power to a secondary coil at a secondary frequency less than the source frequency;
- while applying the lower frequency RF power and generating the magnetic field and the plasma,
- obtaining plasma characterization information of the plasma, and
- adjusting the secondary frequency according to the plasma characterization information;
- and
- processing the substrate using the plasma.
Dependencies are inferred from the claim text.