H01J 2237/31706
Characterised by the area treated
Official title: characterised by the area treated
H01J2237/31706 (Characterised by the area treated) appears on 168 US grants and 198 published applications in this corpus.
Search patents in H01J- Granted patents
- 168
- Published applications
- 198
- Assignees
- 75
- Inventors
- 346
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 1 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 1 | 0 |
| 2002 | 2 | 4 |
| 2003 | 2 | 2 |
| 2004 | 0 | 5 |
| 2005 | 2 | 8 |
| 2006 | 4 | 4 |
| 2007 | 4 | 12 |
| 2008 | 5 | 8 |
| 2009 | 15 | 12 |
| 2010 | 9 | 15 |
| 2011 | 4 | 19 |
| 2012 | 12 | 18 |
| 2013 | 10 | 9 |
| 2014 | 16 | 12 |
| 2015 | 12 | 9 |
| 2016 | 9 | 7 |
| 2017 | 14 | 6 |
| 2018 | 6 | 5 |
| 2019 | 7 | 9 |
| 2020 | 7 | 2 |
| 2021 | 4 | 4 |
| 2022 | 2 | 8 |
| 2023 | 7 | 7 |
| 2024 | 5 | 4 |
| 2025 | 3 | 3 |
| 2026 | 4 | 6 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Method for doping two-dimensional material based on cluster ion implantation25 Aug 2026US 12,719,017 B2Jiangsu Jichuang Atomic Cluster Technology Research Institute Co., Ltd.
- Grid surface conditioning for ion beam system26 May 2026US 12,640,333 B2Veeco Instruments Inc.
- High incidence angle graphite for particle control with dedicated low sputter yield ion beam10 Mar 2026US 12,571,088 B2Axcelis Technologies, Inc.
- Ion implantation device with energy filter having additional thermal energy dissipation surface area3 Mar 2026US 12,567,559 B2Mi2-Factory GmbH
- Ion implantation device comprising energy filter and additional heating element9 Dec 2025US 12,494,337 B2Mi2-Factory GmbH
- Non-uniform subsrate processing using a scanned spot ion beam10 Sep 2026US 2026/0269168 A1APPLIED Materials.Inc.
- Angled ion implant to enable void-free filling of high aspect ratio trench21 May 2026US 2026/0143980 A1APPLIED Materials.Inc.
- Lamella hole trench fill method14 May 2026US 2026/0135062 A1FEI Company
- Ion implantation device, mask set, and method for manufacturing semiconductor device19 Mar 2026US 2026/0081099 A1Kioxia Corporation
- Ion implantation device comprising energy filter and additional heating element5 Mar 2026US 2026/0066210 A1Mi2-Factory GmbH
Most cited
By later US patents
- Ion implantation apparatus, ion generating apparatus and semiconductor manufacturing method with ion implantation processes59US 6,614,033 B2Kabushiki Kaisha Toshiba · 2003
- Method of monitoring ion implants by examination of an overlying masking material52US 6,462,817 B12002
- Graphical automated machine control and metrology52US 6,889,113 B2FEI Company · 2005
- Ion implantation apparatus, ion generating apparatus and semiconductor manufacturing method with ion implantation processes50US 6,335,534 B12002
- Use of chained implants in solar cells39US 7,727,866 B2Varian Semiconductor Equipment Associates, Inc. · 2010