Angled ion implant to enable void-free filling of high aspect ratio trench
AssigneeApplied Materials, Inc.
InventorsSipeng Gu, Wei Zou, Kyu-Ha Shim
Life of this patent
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Abstract
Disclosed herein are approaches for forming a void-free trench fill material in a high aspect ratio trench using an angled ion implant. In some embodiments, a method may include providing a trench in a substrate, the trench including a set of sidewalls connected by a bottom surface, and forming a suppressor layer along an upper portion of the set of sidewalls of the trench by directing ions of an ion beam into the set of sidewalls at a non-zero angle relative to a perpendicular extending from an upper surface of the substrate. The ions impact the upper portion of the set of sidewalls without impacting a lower portion of the set of sidewalls.
Claims20
A method, comprising:
- providing a trench in a substrate, the trench including a set of sidewalls connected by a bottom surface;
- and
- forming a suppressor layer along an upper portion of the set of sidewalls of the trench by directing ions of an ion beam into the set of sidewalls at a non-zero angle relative to a perpendicular extending from an upper surface of the substrate, wherein the ions impact the upper portion of the set of sidewalls without impacting a lower portion of the set of sidewalls.
A method of forming a void-free trench fill material within a trench, the method comprising:
- providing the trench in a substrate, the trench including a set of sidewalls connected by a bottom surface;
- and
- forming a suppressor layer along an upper portion of the set of sidewalls of the trench by directing ions of an ion beam into the set of sidewalls at a non-zero angle relative to a perpendicular extending from an upper surface of the substrate, wherein the ions impact the upper portion of the set of sidewalls without impacting a lower portion of the set of sidewalls and without impacting the bottom surface.
A method of forming a transistor, comprising:
- providing a trench in a substrate, the trench including a set of sidewalls connected by a bottom surface;
- and
- forming a suppressor layer along an upper portion of the set of sidewalls of the trench by directing ions of an ion beam through a mask and into the set of sidewalls at a non-zero angle relative to a perpendicular extending from an upper surface of the substrate, wherein the ions impact the upper portion of the set of sidewalls without impacting a lower portion of the set of sidewalls or the bottom surface.
Dependencies are inferred from the claim text.