Method of monitoring ion implants by examination of an overlying masking material
OwnerCarlos Strocchia-Riverainventor
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Abstract
A process control method to monitor ion implantation process conditions by measuring the optical properties of a masking material is provided. A patterned masking material may protect underlying regions of a semiconductor substrate from undergoing a chemical or physical change during an ion implantation process. The patterned masking material, however, may also undergo a chemical or physical change during processing. The chemical or physical changes to the masking material during such processing may also cause the optical properties of the material to change. The optical properties of the masking material may be used to determine the concentration of ions implanted into the semiconductor substrate.
Claims70
A method for evaluating an ion implantation process, comprising:
- forming a masking material upon a semiconductor substrate;
- implanting ions into the masking material, wherein the implantation of ions into the masking material alters an optical property of the masking material;
- measuring at least one optical property of the masking material using a broadband radiation technique to measure a property of light reflected from the masking material and the semiconductor substrate;
- and
- determining at least one characteristic of the implanted ions in the masking material, wherein the characteristic is a function of the measured optical property of the masking material.
A computer-implemented method for controlling an optical inspection device, comprising:
- controlling the optical inspection device to measure an optical property of an ion implanted masking material by using a broadband radiation technique to measure a property of light reflected from the masking material and the semiconductor substrate, wherein the ion implanted masking material is formed by implanting ions into a masking material residing upon a semiconductor substrate, and wherein the implantation of ions into the masking material alters an optical property of the masking material;
- and
- determining at least one characteristic of the implanted ions in the masking material, wherein the characteristic comprises a function of the measured optical property of the ion implanted masking material.
A system configured to monitor and evaluate an ion implantation process, comprising:
- an ion implanter configured produce and direct ions toward a wafer during use;
- and
- a spectroscopic device coupled to the ion implanter, wherein the spectroscopic device is configured to measure at least one optical property of the wafer during use by using a broadband radiation technique to measure a property of light reflected from the wafer, and wherein implantation of ions into the wafer alters an optical property of the wafer.
A system for inspecting a wafer, comprising:
- a spectroscopic device configured to measure at least one optical property of a wafer during use;
- an operating system configured to determine at least one characteristic of the implanted ions in the wafer during use, wherein the characteristic comprises a function of the measured optical property of the wafer;
- and
- a dual-beam device configured to measure a thickness of the wafer during use, and wherein the operating system is coupled to the spectroscopic device and the dual-beam device.
A method of fabricating a semiconductor device, comprising:
- implanting ions into a wafer, the wafer comprising a masking material and a semiconductor substrate, wherein the masking material is arranged on at least a portion of the semiconductor substrate, and wherein at least a portion of the ions are implanted into the masking material, and wherein the implantation of ions into the masking material alters an optical property of the masking material;
- measuring at least one optical property of the masking material by using a broadband radiation technique to measure a property of light reflected from the masking material and the semiconductor substrate;
- and
- determining at least one characteristic of the implanted ions in the masking material, wherein the characteristic comprises a function of the measured optical property of the masking material.
Dependencies are inferred from the claim text.