Method for doping two-dimensional material based on cluster ion implantation

A method for doping a two-dimensional material based on cluster ion implantation, comprising the following step:

• S1. selecting a two-dimensional material sample to place on a substrate;
• S2. determining selected implantation parameters by Monte Carlo particle tracing algorithm on the two-dimensional material sample;
• S3. replacing the two-dimensional material sample, and placing a two-dimensional material thin film, wherein a thickness of the two-dimensional material thin film is ≤10 nm;
• S4. selecting a determined implantation parameter to form a cluster beam and acting on the two-dimensional material thin film;
• S5. changing implantation parameters to form different cluster beams and acting on the two-dimensional material thin film;
• S6. performing annealing on the two-dimensional material thin film implanted with cluster ions to repair the damage caused by implantation;
• wherein the Monte Carlo particle tracing algorithm uses computer simulation to obtain a relationship between an implantation parameter and an implantation depth;
• and according to the computer simulation result, selecting implantation parameters, wherein the implantation parameters comprise an energy size of a cluster ion beam, a size of a cluster and an element type of the cluster;
• wherein a cluster beam formed after selecting the implantation parameters is implanted into the two-dimensional material sample, and the computer simulation results are corrected by debugging the selected implantation parameters to obtain a numerical distribution based upon the clusters implanted into the sample and the substrate thereof, and
• wherein the relationship between actual implantation parameters and implantation depths is obtained, and the selected implantation parameters are determined.