High incidence angle graphite for particle control with dedicated low sputter yield ion beam

An ion implantation system, comprising:

• an ion source configured to define an ion beam at an initial energy from a predetermined species comprising boron or carbon along a beam path;
• an angular energy filter configured to define a predetermined energy of the ion beam along the beam path, wherein the predetermined energy is less than the initial energy;
• and
• a beamline component positioned downstream of the angular energy filter along the beam path, wherein the beamline component has an upstream-facing surface that is at least partially impinged by the ion beam and is non-parallel to the beam path, wherein the upstream-facing surface comprises a plurality of features configured to define a sputter yield of greater than one, wherein the sputter yield is defined by a ratio of a number of atoms of the predetermined species that are sputtered from the upstream-facing surface to a number of ions of the predetermined species impinging the upstream-facing surface, and wherein each of the plurality of features respectively comprises a feature surface defining a predetermined angle of incidence between the feature surface and the ion beam when measured along the beam path, wherein the predetermined angle of incidence is less than 90 degrees.

An ion implantation system, comprising:

• a source species comprising one of boron or carbon;
• an ion source configured to form an ion beam along a beam path at an initial energy from the source species;
• an angular energy filter positioned downstream of the ion source along the beam path and configured to define a predetermined energy of the ion beam, wherein the predetermined energy is less than the initial energy;
• and
• a beamline component positioned downstream of the angular energy filter along the beam path, wherein the beamline component has an upstream-facing surface that is at least partially impinged by the ion beam and is non-parallel to the beam path, wherein the upstream-facing surface comprises a plurality of features configured to define a sputter yield of greater than one, wherein the sputter yield is defined by a ratio of a number of atoms of the source species that are sputtered from the upstream-facing surface to a number of ions of the source species impinging the upstream-facing surface, and wherein each of the plurality of features respectively comprises a feature surface defining a predetermined angle of incidence between the feature surface and ion beam when measured along the beam path, wherein the predetermined angle of incidence is less than 90 degrees.