US 6,335,534 B1 · Ion implantation apparatus, ion generating apparatus and semiconductor manufacturing method with ion implantation processes

Abstract

An electrically conductive mask having openings formed is located above a semiconductor substrate and ions are implanted into the surface of the semiconductor substrate through the electrically conductive mask, thereby forming ion implanted layers. For ion implantation under different conditions, a dedicated electrically conductive mask is used wit each ion implantation step.

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Facts

Application

09/291,967Filed 15 Apr 1999

Granted

1 Jan 2002

Term ends

Not estimatedThe source records don’t support an estimate.

Classification12 codes

H01J 37/3171
For changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation: for ion implantation
H10D 64/017
Manufacture or treatment: using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e.…
H10P 30/22
Into semiconductor materials, e.g. for doping: using masks
H10P 30/221
Using masks: characterised by the angle between the ion beam and the mask

Ion implantation apparatus, ion generating apparatus and semiconductor manufacturing method with ion implantation processes

Life of this patent

Abstract

Claims0

Ion implantation apparatus, ion generating apparatus and semiconductor manufacturing method with ion implantation processes

Life of this patent

Abstract

Claims0