Ion implantation apparatus, ion generating apparatus and semiconductor manufacturing method with ion implantation processes
AssigneeKabushiki Kaisha Toshiba
InventorsKyoichi Suguro, Atsushi Murakoshi, Katsuya Okumura
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Abstract
An electrically conductive mask having openings formed is located above a semiconductor substrate and ions are implanted into the surface of the semiconductor substrate through the electrically conductive mask, thereby forming ion implanted layers. For ion implantation under different conditions, a dedicated electrically conductive mask is used with each ion implantation step.
Claims28
A method for manufacturing a semiconductor device comprising:
- arranging a conductive mask including openings above a substrate to be processed, and implanting ions into a surface of the substrate by use of the conductive mask;
- changing a relative position between the substrate and the conductive mask, and then implanting ions into the surface of the substrate by use of the mask;
- and
- performing heat treatment to recover defects in the substrate resulting from the ions implanting.
A method for manufacturing a semiconductor device comprising:
- arranging a conductive mask including openings above a substrate to be processed, and implanting ions into the semiconductor substrate by use of the conductive mask;
- and
- changing a relative position between the substrate and the conductive mask and then, after a photolithography process, implanting ions into the surface of the substrate by use of the mask.
A method for manufacturing a semiconductor device comprising:
- arranging a conductive mask including openings above a substrate to be processed, and implanting ions into a surface of the substrate by use of the conductive mask;
- and
- changing a relative position between the substrate and the conductive mask, and then implanting one of ions selected from a group consisting of B ions, Ga ions, In ions, P ions, As ions, and Sb ions into the surface of the substrate by use of the mask.
A method for manufacturing a semiconductor device comprising:
- arranging a conductive mask including openings above a substrate to be processed, and implanting ions into the semiconductor substrate by use of the conductive mask;
- and
- changing a relative position between the substrate and the conductive mask and then implanting ions into the surface of the substrate by use of the mask.
Dependencies are inferred from the claim text.