H01J 2237/31701
Ion implantation
H01J2237/31701 (Ion implantation) appears on 1,022 US grants and 999 published applications in this corpus.
Search patents in H01J- Granted patents
- 1,022
- Published applications
- 999
- Assignees
- 265
- Inventors
- 1,628
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 3 | 0 |
| 1988 | 0 | 0 |
| 1989 | 2 | 0 |
| 1990 | 0 | 0 |
| 1991 | 3 | 0 |
| 1992 | 7 | 0 |
| 1993 | 6 | 0 |
| 1994 | 11 | 0 |
| 1995 | 13 | 0 |
| 1996 | 17 | 0 |
| 1997 | 11 | 0 |
| 1998 | 18 | 0 |
| 1999 | 27 | 0 |
| 2000 | 24 | 0 |
| 2001 | 24 | 6 |
| 2002 | 17 | 47 |
| 2003 | 39 | 34 |
| 2004 | 34 | 33 |
| 2005 | 34 | 48 |
| 2006 | 41 | 55 |
| 2007 | 32 | 66 |
| 2008 | 52 | 64 |
| 2009 | 53 | 61 |
| 2010 | 63 | 43 |
| 2011 | 35 | 43 |
| 2012 | 36 | 37 |
| 2013 | 23 | 30 |
| 2014 | 39 | 33 |
| 2015 | 30 | 38 |
| 2016 | 34 | 30 |
| 2017 | 49 | 45 |
| 2018 | 28 | 23 |
| 2019 | 35 | 36 |
| 2020 | 41 | 34 |
| 2021 | 23 | 33 |
| 2022 | 21 | 32 |
| 2023 | 32 | 31 |
| 2024 | 25 | 36 |
| 2025 | 22 | 34 |
| 2026 | 16 | 27 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Method for doping two-dimensional material based on cluster ion implantation25 Aug 2026US 12,719,017 B2Jiangsu Jichuang Atomic Cluster Technology Research Institute Co., Ltd.
- Ion beam implantation method and semiconductor device25 Aug 2026US 12,721,070 B2Infineon Technologies AG
- Air bearing shaft with wide operating temperature range11 Aug 2026US 12,706,271 B2APPLIED Materials.Inc.
- Actively cooled gas line for ion source4 Aug 2026US 12,700,565 B2APPLIED Materials.Inc.
- Grid surface conditioning for ion beam system26 May 2026US 12,640,333 B2Veeco Instruments Inc.
- Ion implanter and ion implantation method8 Oct 2026US 2026/0311963 A1Chongqing Advanced Silicon Technology Co., LTD
- Non-uniform subsrate processing using a scanned spot ion beam10 Sep 2026US 2026/0269168 A1APPLIED Materials.Inc.
- Apparatus and techniques for substrate processing using independent ion source and radical source13 Aug 2026US 2026/0237601 A1APPLIED Materials.Inc.
- Quantifying film accumulation on an insulating surface in semiconductor processing equipment6 Aug 2026US 2026/0229451 A1
- Ion implanter30 Jul 2026US 2026/0221385 A1Nissin Ion Equipment Co., Ltd.
Most cited
By later US patents
- Methods and systems for determining a critical dimension and a thin film characteristic of a specimen248US 6,633,831 B2KLA-Tencor Technologies Corporation · 2003
- Methods and systems for determining a critical dimension and overlay of a specimen129US 8,179,530 B2KLA-Tencor Technologies Corporation · 2012
- System and method for magnetic scanning, accelerating, and implanting of an ion beam122US 5,483,077 ANissin Electric Co., Ltd. · 1996
- Methods and systems for determining at least four properties of a specimen121US 6,694,284 B1KLA-Tencor Technologies Corporation · 2004
- Methods and systems for determining a critical dimension and overlay of a specimen120US 6,891,627 B1KLA-Tencor Technologies Corporation · 2005