H01J 2237/31703
Dosimetry
H01J2237/31703 (Dosimetry) appears on 237 US grants and 233 published applications in this corpus.
Search patents in H01J- Granted patents
- 237
- Published applications
- 233
- Assignees
- 80
- Inventors
- 440
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 1 | 0 |
| 1993 | 2 | 0 |
| 1994 | 3 | 0 |
| 1995 | 3 | 0 |
| 1996 | 1 | 0 |
| 1997 | 1 | 0 |
| 1998 | 3 | 0 |
| 1999 | 4 | 0 |
| 2000 | 4 | 0 |
| 2001 | 7 | 4 |
| 2002 | 2 | 3 |
| 2003 | 7 | 7 |
| 2004 | 7 | 16 |
| 2005 | 10 | 20 |
| 2006 | 21 | 24 |
| 2007 | 15 | 27 |
| 2008 | 23 | 24 |
| 2009 | 19 | 19 |
| 2010 | 21 | 7 |
| 2011 | 10 | 8 |
| 2012 | 7 | 5 |
| 2013 | 5 | 10 |
| 2014 | 10 | 3 |
| 2015 | 4 | 6 |
| 2016 | 9 | 6 |
| 2017 | 7 | 6 |
| 2018 | 2 | 2 |
| 2019 | 6 | 3 |
| 2020 | 4 | 4 |
| 2021 | 4 | 6 |
| 2022 | 3 | 1 |
| 2023 | 5 | 6 |
| 2024 | 2 | 6 |
| 2025 | 1 | 5 |
| 2026 | 3 | 5 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Ion beam implantation method and semiconductor device25 Aug 2026US 12,721,070 B2Infineon Technologies AG
- Substrate stress management using variable energy and variable dose implantation21 Apr 2026US 12,609,280 B2APPLIED Materials.Inc.
- Dose cup assembly for an ion implanter27 Jan 2026US 12,537,161 B2APPLIED Materials.Inc.
- Ion implantation method, ion implanter, and method for manufacturing semiconductor device11 Nov 2025US 12,469,677 B2Sumitomo Heavy Industries Ion Technology Co., Ltd.
- System and technique for creating implanted regions using multiple tilt angles4 Jun 2024US 12,002,852 B2APPLIED Materials.Inc.
- Ion implantation and vacuum bake of extreme ultraviolet photoresist to improve fine patterning performance18 Jun 2026US 2026/0173826 A1APPLIED Materials.Inc.
- Scanned beam dose rate measurement for ion beam optimization28 May 2026US 2026/0148932 A1APPLIED Materials.Inc.
- Substrate property control using dose-dependent response28 May 2026US 2026/0148933 A1APPLIED Materials.Inc.
- Beam conditioning for defect control in beamline ion implanter14 May 2026US 2026/0135063 A1APPLIED Materials.Inc.
- Beam tuning for non-uniform ion implantation15 Jan 2026US 2026/0018379 A1APPLIED Materials.Inc.
Most cited
By later US patents
- Method of determining dose uniformity of a scanning ion implanter70US 6,965,116 B1APPLIED Materials.Inc. · 2005
- End station for a parallel beam ion implanter69US 5,229,615 AEaton Corporation · 1993
- Dose monitor for plasma doping system65US 6,020,592 AVarian Semiconductor Equipment Associates, Inc. · 2000
- Method of monitoring ion beam current in ion implantation apparatus for use in manufacturing semiconductors57US 5,319,212 AGenus, Inc. · 1994
- Dosimetry cup charge collection in plasma immersion ion implantation51US 6,050,218 AEaton Corporation · 2000