Substrate stress management using variable energy and variable dose implantation

Abstract

A method of stress management in a substrate. The method may include comprising providing a stress compensation layer on a main surface of the substrate; and performing a dynamic implant procedure in an ion implanter to implant a set of ions into the stress compensation layer. The dynamic implant procedure may include exposing the substrate to an ion beam under a first set of conditions, the first set of conditions comprising an ion energy, a beam scan rate and a substrate scan rate; and varying at least the ion energy while the substrate is exposed to the ion beam. As such, a stress state of the substrate may change as a function of location on the substrate as a result of the dynamic implant.

Dependencies are inferred from the claim text.