Dosimetry cup charge collection in plasma immersion ion implantation

Abstract

Method and apparatus for causing ions to impact a workpiece implantation surface. A process chamber defines a chamber interior into which one or more workpieces can be inserted for ion treatment. An energy source sets up an ion plasma within the process chamber. A support positions one or more workpieces within an interior region of the process chamber so that an implantation surface of the one or more workpieces is positioned within the ion plasma. A pulse generator in electrical communication with the workpiece support applies electrical pulses for attracting ions to the support. One or more dosimetry cups including an electrically biased ion collecting surface are disposed around the workpiece support to measure implantation current. An implantation controller monitors signals from the one or more dosimetry cups to control ion implantation of the workpiece.

Dependencies are inferred from the claim text.