Apparatus and techniques for substrate processing using independent ion source and radical source
AssigneeApplied Materials, Inc.
InventorsAnthony Renau, Joseph C. Olson, Peter F. Kurunczi
Life of this patent
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Abstract
A system may include a substrate stage to support a substrate, and a plurality of beam sources. The plurality of beam sources may include an ion beam source, the ion beam source arranged to direct an ion beam to the substrate, and a radical beam source, the radical beam source arranged to direct a radical beam to the substrate. The system may include a controller configured to control the ion beam source and the radical beam source to operate independently of one another, in at least one aspect, wherein the at least one aspect includes beam composition, beam angle of incidence, and relative scanning of a beam source with respect to the substrate.
Claims20
An apparatus, comprising:
- an ion source configured to generate an ion beam;
- a process chamber having a substrate stage to secure a substrate to be treated with the ion beam;
- and
- a radical beam source positioned in the process chamber, the radical beam source configured to generate and direct a radical beam to the substrate.
A system, comprising:
- an ion source configured to generate an ion beam;
- a process chamber having a substrate stage to secure a substrate to be treated with the ion beam;
- and
- a radical beam source positioned in the process chamber, the radical beam source configured to generate and direct a radical beam to the substrate at a non-zero angle of incidence with respect to a normal to a main plane of the substrate.
An apparatus, comprising:
- an ion source configured to generate an ion beam;
- a process chamber having a substrate stage to secure a substrate to be treated with the ion beam;
- and
- a radical beam source positioned in the process chamber, wherein the radical beam source is configured to generate and direct a radical beam to the substrate at a non-zero angle of incidence with respect to a normal to a main plane of the substrate, and wherein the radical beam is directed to the substrate independently of the ion beam.
Dependencies are inferred from the claim text.