H01J 2237/31705
Impurity or contaminant control
H01J2237/31705 (Impurity or contaminant control) appears on 135 US grants and 147 published applications in this corpus.
Search patents in H01J- Granted patents
- 135
- Published applications
- 147
- Assignees
- 45
- Inventors
- 322
- Latest grant
- 10 Mar 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1991 | 1 | 0 |
| 1992 | 2 | 0 |
| 1993 | 1 | 0 |
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 2 | 0 |
| 1997 | 0 | 0 |
| 1998 | 6 | 0 |
| 1999 | 3 | 0 |
| 2000 | 3 | 0 |
| 2001 | 0 | 0 |
| 2002 | 1 | 0 |
| 2003 | 4 | 1 |
| 2004 | 0 | 3 |
| 2005 | 1 | 6 |
| 2006 | 9 | 11 |
| 2007 | 3 | 19 |
| 2008 | 11 | 8 |
| 2009 | 16 | 8 |
| 2010 | 7 | 5 |
| 2011 | 1 | 1 |
| 2012 | 5 | 0 |
| 2013 | 1 | 3 |
| 2014 | 3 | 5 |
| 2015 | 2 | 5 |
| 2016 | 3 | 4 |
| 2017 | 5 | 9 |
| 2018 | 4 | 3 |
| 2019 | 3 | 3 |
| 2020 | 8 | 12 |
| 2021 | 6 | 12 |
| 2022 | 3 | 6 |
| 2023 | 13 | 7 |
| 2024 | 4 | 7 |
| 2025 | 1 | 3 |
| 2026 | 2 | 6 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- High incidence angle graphite for particle control with dedicated low sputter yield ion beam10 Mar 2026US 12,571,088 B2Axcelis Technologies, Inc.
- Capacitive sensing data integration for plasma chamber condition monitoring27 Jan 2026US 12,537,179 B2APPLIED Materials.Inc.
- Ion generator and ion implanter4 Mar 2025US 12,243,708 B2Sumitomo Heavy Industries Ion Technology Co., Ltd.
- Ion generation device and ion generation method7 May 2024US 11,978,608 B2Sumitomo Heavy Industries Ion Technology Co., Ltd.
- Ion implantation gas supply system16 Apr 2024US 11,961,707 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Quantifying film accumulation on an insulating surface in semiconductor processing equipment6 Aug 2026US 2026/0229451 A1
- Ion implanter30 Jul 2026US 2026/0221385 A1Nissin Ion Equipment Co., Ltd.
- Angled ion implant to enable void-free filling of high aspect ratio trench21 May 2026US 2026/0143980 A1APPLIED Materials.Inc.
- Beam conditioning for defect control in beamline ion implanter14 May 2026US 2026/0135063 A1APPLIED Materials.Inc.
- Spectroscopy-based safety system for nuclear reaction detection in an ion implantation system30 Apr 2026US 2026/0120994 A1Axcelis Technologies, Inc.
Most cited
By later US patents
- Ion implantation apparatus having increased source lifetime55US 5,886,355 AAPPLIED Materials.Inc. · 1999
- Ion implantation apparatus having increased source lifetime52US 5,262,652 AAPPLIED Materials.Inc. · 1993
- Loadlock assembly for an ion implantation system43US 5,751,003 AEaton Corporation · 1998
- Ion purification for plasma ion implantation39US 5,289,010 AWisconsin Alumni Research Foundation · 1994
- Plasma chamber for controlling ion dosage in ion implantation38US 5,760,405 AEaton Corporation · 1998