Plasma chamber for controlling ion dosage in ion implantation

Abstract

An ion source for generating an ion beam of primary ions is disclosed that includes a plasma chamber and magnets positioned therein for separating the primary ions of the plasma from secondary ions within the plasma. An electrode assembly extracts the primary ions through an extractor outlet port of the plasma chamber to form an ion beam, which preferentially is shaped as a ribbon beam. The primary ions are accelerated in the form of a ribbon beam toward the target workpiece for doping the device. The magnets are oriented in the chamber to produce a uniform current density of primary ions parallel to the elongated axis of the ribbon beam.

Dependencies are inferred from the claim text.