Ion implantation gas supply system
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHsing-Piao Hsu, Nai-Han Cheng, Ping-Chih Ou
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Abstract
The present disclosure describes a system and a method for providing a mixed gas to an ion implantation tool. The system includes a water supply, an electrical source, a gas generator. The gas generator is configured to generate a first gas from the water supply and the electrical source. The system also includes a first flow controller configured to control a first flow rate of the first gas, a gas container to provide a second gas, a second flow controller configured to control a second flow rate of the second gas, and a gas pipe configured to mix the first and second gases into a mixed gas. The mixed gas can be delivered to, for example, an ion source head of the ion implantation tool.
Claims20
A system, comprising:
- a first gas generator configured to generate a first gas from a water supply for a period of time greater than that of a first gas container with a first predetermined storage capacity;
- a first flow controller configured to control a first flow rate of the first gas;
- a second gas generator configured to generate a second gas from an air supply for a period of time greater than that of a second gas container with a second predetermined storage capacity;
- a second flow controller configured to control a second flow rate of the second gas;
- and
- a gas pipe configured to mix the first gas and the second gas into a mixed gas.
A method, comprising:
- generating, by a first gas generator, a first gas for a period of time greater than that of a first gas container with a first predetermined storage capacity;
- controlling a first flow rate of the first gas by a first flow controller connected to the first gas generator;
- generating, by a second gas generator, a second gas for a period of time greater than that of a second gas container with a second predetermined storage capacity, wherein the second gas is different from the first gas;
- controlling a second flow rate of the second gas by a second flow controller connected to the second gas generator;
- and
- mixing the first gas and the second gas into a mixed gas.
An ion implantation system, comprising:
- an ion source head configured to extract an ion beam;
- and
- a gas supply system configured to provide a mixed gas to the ion source head, comprising:
- a first gas generator configured to generate a first gas from a water supply for a period of time greater than that of a first gas container with a first predetermined storage capacity;
- a first flow controller configured to control a first flow rate of the first gas;
- a second gas generator configured to generate a second gas from an air supply for a period of time greater than that of a second gas container with a second predetermined storage capacity;
- a second flow controller configured to control a second flow rate of the second gas;
- and
- a gas pipe configured to:
- mix the first and the second gases into the mixed gas;
- and
- deliver the mixed gas to the ion source head.
Dependencies are inferred from the claim text.