Ion implantation device, mask set, and method for manufacturing semiconductor device
AssigneeKioxia Corporation
InventorYasunori OHSHIMA
Life of this patent
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Abstract
According to one embodiment, an ion implantation device includes an ion beam irradiation unit that emits an ion beam; a target substrate holding unit that holds a target substrate disposed in a path of the ion beam; a first mask holding unit that holds a first mask disposed in front of the target substrate in the path; and a second mask holding unit that holds a second mask disposed between the first mask and the target substrate in the path. The first mask includes a first opening pattern through which the ion beam is able to pass. The second mask includes a second opening pattern through which the ion beam is able to pass.
Claims20
An ion implantation device comprising:
- an ion beam irradiator that emits an ion beam;
- a target substrate holder configured to hold a target substrate disposed in a path of the ion beam;
- a first mask holder configured to hold a first mask disposed in front of the target substrate in the path;
- and
- a second mask holder configured to hold a second mask disposed between the first mask and the target substrate in the path;
- wherein the first mask includes a first opening pattern through which the ion beam is able to pass, and the second mask includes a second opening pattern through which the ion beam is able to pass.
A mask set disposed in front of a target substrate disposed in a path of an ion beam, the mask set comprising:
- a first mask comprising a first opening pattern;
- and
- a second mask comprising a second opening pattern, wherein:
- the first opening pattern comprises:
- a first opening extending in a fan shape from a center of the first mask toward a periphery of the first mask;
- and
- a second opening extending in a line shape to pass through the center of the first mask;
- the second opening pattern comprises:
- a third opening extending in a fan shape from a center of the second mask toward a periphery of the second mask;
- and
- a fourth opening extending in a line shape to pass through the center of the second mask;
- and
- a planar shape of the first opening pattern and a planar shape of the second opening pattern comprise a symmetric relationship.
A method for manufacturing a semiconductor device, comprising:
- a target substrate comprising a semiconductor wafer comprising a first surface and a second surface opposite to the first surface and a layer formed on the first surface is disposed in a path of an ion beam, a first mask comprising a first opening pattern is disposed in front of the target substrate in the path, and a second mask comprising a second opening pattern is disposed between the first mask and the target substrate in the path;
- the first opening pattern comprises:
- a first opening extending in a fan shape from a center of the first mask toward a periphery of the first mask;
- and
- a second opening extending in a line shape to pass through the center of the first mask;
- the second opening pattern comprises:
- a third opening extending in a fan shape from a center of the second mask toward a periphery of the second mask;
- and
- a fourth opening extending in a line shape to pass through the center of the second mask;
- a planar shape of the first opening pattern and a planar shape of the second opening pattern comprise a symmetric relationship;
- and
- at least one mask selected from a group configured with the first mask and the second mask is rotated about a rotation axis along a propagating direction of the ion beam, and the second surface is selectively irradiated with the ion beam via the first mask and the second mask, thereby forming a dose amount distribution of ions contained in the ion beam on the semiconductor wafer.
Dependencies are inferred from the claim text.