G11C 2216/12
Reading and writing aspects of erasable programmable read-only memories
G11C2216/12 (Reading and writing aspects of erasable programmable read-only memories) appears on 1,139 US grants and 1,023 published applications in this corpus.
Search patents in G11C- Granted patents
- 1,139
- Published applications
- 1,023
- Assignees
- 245
- Inventors
- 1,506
- Latest grant
- 11 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 2 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 2 | 0 |
| 1989 | 0 | 0 |
| 1990 | 3 | 0 |
| 1991 | 2 | 0 |
| 1992 | 1 | 0 |
| 1993 | 3 | 0 |
| 1994 | 10 | 0 |
| 1995 | 4 | 0 |
| 1996 | 4 | 0 |
| 1997 | 7 | 0 |
| 1998 | 18 | 0 |
| 1999 | 29 | 0 |
| 2000 | 25 | 0 |
| 2001 | 26 | 13 |
| 2002 | 41 | 39 |
| 2003 | 47 | 69 |
| 2004 | 52 | 48 |
| 2005 | 52 | 60 |
| 2006 | 61 | 80 |
| 2007 | 52 | 68 |
| 2008 | 66 | 68 |
| 2009 | 48 | 53 |
| 2010 | 59 | 55 |
| 2011 | 45 | 39 |
| 2012 | 58 | 54 |
| 2013 | 44 | 32 |
| 2014 | 45 | 34 |
| 2015 | 32 | 23 |
| 2016 | 27 | 16 |
| 2017 | 29 | 24 |
| 2018 | 28 | 33 |
| 2019 | 30 | 37 |
| 2020 | 38 | 37 |
| 2021 | 38 | 44 |
| 2022 | 29 | 27 |
| 2023 | 28 | 25 |
| 2024 | 28 | 22 |
| 2025 | 15 | 14 |
| 2026 | 9 | 9 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- G11C 2216/14Circuits or methods to write a page or sector of information simultaneouslyIndexing code402
- G11C 2216/22Nonvolatile memory in which reading can be carried out from one memoryIndexing code187
- G11C 2216/20Suspension of programming or erasing cells in an array in order toIndexing code158
- G11C 2216/18Flash erasure of all the cells in an array, sector or blockIndexing code141
- G11C 2216/30Reduction of number of input/output pins by using a serial interface toIndexing code116
- G11C 2216/16Flash programming of all the cells in an array, sector or blockIndexing code79
- G11C 2216/26Floating gate memory which is adapted to be one-time programmable [otp]Indexing code73
- G11C 2216/24Nonvolatile memory in which programming can be carried out in one memoryIndexing code26
All 9 subgroupsShow fewer
Recent patents
- Managing allocation of sub-blocks in a memory sub-system11 Aug 2026US 12,704,970 B2Micron Technology, Inc.
- State dependent suspend-resume-go for performance improvement in a memory device11 Aug 2026US 12,706,149 B2SanDisk Technologies LLC
- Selective management of erase operations in memory devices that enable suspend commands11 Aug 2026US 12,706,156 B2Micron Technology, Inc.
- Memory device and method of erasure operations using GIDL and negative wordline voltages14 Jul 2026US 12,682,958 B2SK hynix Inc.
- Semiconductor device and simultaneous block operations method using multiple source lines23 Jun 2026US 12,665,039 B2SK hynix Inc.
- Charge storage type tunneling transistor device, manufacturing method thereof, and boolean logic operation method25 Jun 2026US 2026/0181965 A1Seoul National University R&Db Foundation
- Solid state drive (ssd) with in-flight erasure iteration suspension21 May 2026US 2026/0141965 A1SK Hynix NAND Product Solutions Corp.
- Large memory window vertical nand ferroelectric charge pumping field effect transistor for high-density and low-power storage30 Apr 2026US 2026/0122897 A1The Penn State Research Foundation
- Memory device and operation method therof16 Apr 2026US 2026/0105967 A1Macronix International Co., Ltd.
- Memory device performing erase operation in sub-block unit and operating method of memory device26 Mar 2026US 2026/0088116 A1SK hynix Inc.
Most cited
By later US patents
- Flash eeprom system602US 5,297,148 ASunDisk Corporation · 1994
- Flash EEprom system524US 5,602,987 ASanDisk Corporation · 1997
- Programming method to reduce gate coupling interference for non-volatile memory460US 7,400,532 B2Micron Technology, Inc. · 2008
- Operation of a non-volatile memory array458US 7,924,628 B2Spansion Israel Ltd · 2011
- Flash EEPROM system with erase sector select437US 5,418,752 ASunDisk Corporation · 1995