G11C 2216/16
Flash programming of all the cells in an array, sector or block
Official title: Flash programming of all the cells in an array, sector or block simultaneously
G11C2216/16 (Flash programming of all the cells in an array, sector or block) appears on 79 US grants and 67 published applications in this corpus.
Search patents in G11C- Granted patents
- 79
- Published applications
- 67
- Assignees
- 34
- Inventors
- 91
- Latest grant
- 11 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 2 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 1 | 0 |
| 2000 | 1 | 0 |
| 2001 | 0 | 1 |
| 2002 | 1 | 2 |
| 2003 | 3 | 5 |
| 2004 | 6 | 2 |
| 2005 | 4 | 4 |
| 2006 | 1 | 2 |
| 2007 | 3 | 0 |
| 2008 | 0 | 3 |
| 2009 | 0 | 1 |
| 2010 | 5 | 0 |
| 2011 | 1 | 2 |
| 2012 | 1 | 1 |
| 2013 | 2 | 1 |
| 2014 | 2 | 1 |
| 2015 | 2 | 2 |
| 2016 | 2 | 1 |
| 2017 | 4 | 4 |
| 2018 | 4 | 5 |
| 2019 | 5 | 5 |
| 2020 | 7 | 8 |
| 2021 | 5 | 9 |
| 2022 | 4 | 2 |
| 2023 | 4 | 4 |
| 2024 | 5 | 2 |
| 2025 | 1 | 0 |
| 2026 | 2 | 0 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Managing allocation of sub-blocks in a memory sub-system11 Aug 2026US 12,704,970 B2Micron Technology, Inc.
- Nonvolatile semiconductor memory device9 Jun 2026US 12,651,636 B2Kioxia Corporation
- Non-volatile memory octo mode program and erase operation method with reduced test time4 Mar 2025US 12,243,609 B2SK keyfoundry Inc.
- Semiconductor device performing block program and operating method thereof27 Aug 2024US 12,073,887 B2Samsung Electronics Co., Ltd.
- Erase cycle healing using a high voltage pulse7 May 2024US 11,978,514 B2Micron Technology, Inc.
- Nonvolatile semiconductor memory device22 Aug 2024US 2024/0282384 A1Kioxia Corporation
- Managing allocation of sub-blocks in a memory sub-system11 Jul 2024US 2024/0231641 A1Micron Technology, Inc.
- Nonvolatile semiconductor memory device1 Jun 2023US 2023/0170027 A1Kioxia Corporation
- Non-volatile memory octo mode program and erase operation method with reduced test time23 Mar 2023US 2023/0087413 A1Key Foundry Co., Ltd.
- First-pass continuous read level calibration23 Feb 2023US 2023/0054653 A1Micron Technology, Inc.
Most cited
By later US patents
- Partial block data programming and reading operations in a non-volatile memory321US 6,763,424 B2SanDisk Corporation · 2004
- Method for bulk (or byte) charging and discharging an array of flash EEPROM memory cells101US 5,491,657 AAdvanced Micro Devices, Inc. · 1996
- Partial block data programming and reading operations in a non-volatile memory98US 6,968,421 B2SanDisk Corporation · 2005
- Low voltage Fowler-Nordheim flash EEPROM memory array utilizing single level poly cells57US 5,504,706 ATexas Instruments Incorporated · 1996
- Flash storage system with write/erase abort detection mechanism42US 7,299,314 B2SanDisk Corporation · 2007