Semiconductor device performing block program and operating method thereof
AssigneeSamsung Electronics Co., Ltd.
InventorsSanggyu Ko, Yeongmin Yoo
Life of this patent
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Abstract
An operating method of a semiconductor device including a controller and a non-volatile memory device operating under control of the controller is provided. The operating method includes determining, by the controller, whether the non-volatile memory device satisfies a block program condition; based on the non-volatile memory device satisfying the block program condition, performing a block program operation a plurality of times; and based the non-volatile memory device not satisfying the block program condition, performing an erase operation.
Claims20
An operating method of a semiconductor device including a controller and a non-volatile memory device operating under control of the controller, the operating method comprising:
- determining, by the controller, whether the non-volatile memory device satisfies a block program condition, wherein the block program condition is based on an erase count of a memory block and a number of deteriorated memory cells identified by performing a one-shot program operation;
- based on the non-volatile memory device satisfying the block program condition, performing a block program operation a plurality of times, wherein the block program operation is associated with removing excess holes;
- and
- based the non-volatile memory device not satisfying the block program condition, performing an erase operation, wherein the erase operation is associated with removing excess electrons.
A semiconductor device comprising:
- a controller including a metadata buffer configured to store metadata;
- and a non-volatile memory device configured to perform an operation based on control of the controller,
- wherein the controller is configured to determine whether the non-volatile memory device satisfies a block program condition, wherein the block program condition is based on an erase count of a memory block and a number of deteriorated memory cells identified by performing a one-shot program operation,
- wherein the erase count refers to a count of an erase operation, and the erase operation is associated with removing excess electrons, and
- wherein the non-volatile memory device is configured to, based on the block program condition being satisfied, continuously perform at least three times a block program operation, wherein the block program operation is associated with removing excess holes.
A non-volatile memory device comprising memory cells each storing data of at least two bits, wherein the non-volatile memory device is configured to:
- based on a block program condition being satisfied, wherein the block program condition is based on an erase count of a memory block and a number of deteriorated memory cells identified by performing a one-shot program operation, continuously perform a block program operation a plurality of times by applying a block program voltage to first memory cells in a selected memory block the plurality of times, wherein the block program operation is associated with removing excess holes, and
- after the performing of the block program operation the plurality of times, perform a block erase operation by applying an erase voltage to a bulk of the first memory cells in the selected memory block, wherein the block erase operation is associated with removing excess electrons.
Dependencies are inferred from the claim text.