G11C 2216/24
Nonvolatile memory in which programming can be carried out in one memory
Official title: Nonvolatile memory in which programming can be carried out in one memory bank or array whilst a word or sector in another bank or array is being erased simultaneously
G11C2216/24 (Nonvolatile memory in which programming can be carried out in one memory) appears on 26 US grants and 32 published applications in this corpus.
Search patents in G11C- Granted patents
- 26
- Published applications
- 32
- Assignees
- 20
- Inventors
- 50
- Latest grant
- 23 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2000 | 1 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 1 |
| 2005 | 1 | 1 |
| 2006 | 1 | 0 |
| 2007 | 0 | 2 |
| 2008 | 1 | 0 |
| 2009 | 0 | 0 |
| 2010 | 1 | 2 |
| 2011 | 1 | 1 |
| 2012 | 0 | 2 |
| 2013 | 2 | 1 |
| 2014 | 1 | 1 |
| 2015 | 1 | 2 |
| 2016 | 3 | 1 |
| 2017 | 1 | 1 |
| 2018 | 1 | 2 |
| 2019 | 1 | 0 |
| 2020 | 1 | 1 |
| 2021 | 0 | 1 |
| 2022 | 2 | 5 |
| 2023 | 3 | 1 |
| 2024 | 0 | 2 |
| 2025 | 3 | 2 |
| 2026 | 1 | 3 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device and simultaneous block operations method using multiple source lines23 Jun 2026US 12,665,039 B2SK hynix Inc.
- Storage devices with multiple NAND dies21 Oct 2025US 12,451,190 B2Samsung Electronics Co., Ltd.
- Storage device, electronic device, and method for controlling memory12 Aug 2025US 12,386,535 B2Samsung Electronics Co., Ltd.
- Background operations in memory18 Feb 2025US 12,229,449 B2
- Memory device28 Nov 2023US 11,830,558 B2Samsung Electronics Co., Ltd.
- Storage device, electronic device, and method for controlling memory12 Mar 2026US 2026/0072603 A1
- Apparatuses systems and methods for linked bank refresh5 Feb 2026US 2026/0038562 A1Micron Technology, Inc.
- Memory controller, memory device and storage device22 Jan 2026US 2026/0024586 A1Samsung Electronics Co., Ltd.
- Semiconductor device and operation method using the same5 Jun 2025US 2025/0182832 A1SK hynix Inc.
- Background operations in memory15 May 2025US 2025/0156121 A1Lodestar Licensing Group LLC
Most cited
By later US patents
- Nonvolatile semiconductor memory device16US 7,957,203 B2Kabushiki Kaisha Toshiba · 2011
- Non-volatile semiconductor memory device in which read, write and erase operations can be simultaneously performed in different memory cell array blocks15US 6,081,450 ASharp Kabushiki Kaisha · 2000
- Semiconductor memory device14US 10,002,671 B2Toshiba Memory Corporation · 2018
- Multibank memory on a die12US 6,965,527 B2Matrix Semiconductor, Inc. · 2005
- Nonvolatile semiconductor memory device10US 8,391,082 B2Kabushiki Kaisha Toshiba · 2013